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<p>In this paper, we consider a cascade scheme for generation ultrashort laser pulses with a controlled repetition rate and a broadband comb spectrum. The main element of this configuration is a cylindrical semiconductor waveguide based on n-GaAs, supporting a space charge wave. A strong phase modulation of the surface electromagnetic wave in the semiconductor waveguide occurs when the phase synchronism condition with the space charge wave is satisfied. After passing through the cascade of an “amplifier - single-mode fiber”, the phase-modulated radiation is transformed into a sequence of ultrashort laser pulses with peak amplitudes orders of magnitude greater than the average power of the radiation introduced into the semiconductor structure. It is shown that the generated comb spectrum and pulse repetition rate can be tuned by controlling the electric potential difference applied between the ends of the semiconductor waveguide.</p>

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Generation of tunable spectral combs in cascade schemes based on a semiconductor waveguide structure with a traveling space charge wave

  • 期刊论文

  • 发表日期：

    2026年3月1日

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  • A. S. Abramov,
  • S. G. Moiseev,
  • D. G. Sannikov

摘要

In this paper, we consider a cascade scheme for generation ultrashort laser pulses with a controlled repetition rate and a broadband comb spectrum. The main element of this configuration is a cylindrical semiconductor waveguide based on n-GaAs, supporting a space charge wave. A strong phase modulation of the surface electromagnetic wave in the semiconductor waveguide occurs when the phase synchronism condition with the space charge wave is satisfied. After passing through the cascade of an “amplifier - single-mode fiber”, the phase-modulated radiation is transformed into a sequence of ultrashort laser pulses with peak amplitudes orders of magnitude greater than the average power of the radiation introduced into the semiconductor structure. It is shown that the generated comb spectrum and pulse repetition rate can be tuned by controlling the electric potential difference applied between the ends of the semiconductor waveguide.