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<p>A sensitive high-pressure sensor is proposed, simulated, and optimized based on one-dimensional (1D) photonic crystal (PC) to find out the external applied pressure from 5 to 15 GPa employing finite element method (FEM). The 1D-PC is designed with alternating layers of GaAs and Air, structured as (GaAs/Air)<sup>N</sup>/Al<sub>2</sub>O<sub>3</sub>/(GaAs/Air)<sup>N</sup> with the defect layer of Al<sub>2</sub>O<sub>3</sub> to achieve the measurable shifting in resonant peak of the transmission and reflectance spectra as GaAs is consistent with photo-elastic phenomenon at high pressure. The transfer matrix method (TMM) is developed for the proposed architecture to characterise the spectra due to the change in refractive index (RI), which is varied with the variation of pressure. Very high pressure from 5 to 15 GPa is considered for simulation in the form of material’s RI which finally leads to shift the resonant peak near the smaller wavelength. The detailed FEM analysis for the proposed designed was completed to optimize the number of layers and their width. A very high sensitivity of 3.3429&#xa0;nm/GPa at an external applied pressure of 15 GPa was observed in our proposed design. This design holds promise for applications in tunable filters and high-pressure environments, such as hydrostatic pressure sensors.</p>

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Defect mode assisted 1-D photonic crystal design for the application of ultra-high pressure sensor employing GaAs/air with aluminium oxide

  • 期刊论文

  • 发表日期：

    2026年3月5日

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  • Barnali Pal,
  • Aloke Kumar Pathak,
  • Bibhatsu Kuiri,
  • Dipankar Biswas,
  • Bubai Dutta,
  • Santanu Mishra,
  • Ardhendu Sekhar Patra

摘要

A sensitive high-pressure sensor is proposed, simulated, and optimized based on one-dimensional (1D) photonic crystal (PC) to find out the external applied pressure from 5 to 15 GPa employing finite element method (FEM). The 1D-PC is designed with alternating layers of GaAs and Air, structured as (GaAs/Air)N/Al2O3/(GaAs/Air)N with the defect layer of Al2O3 to achieve the measurable shifting in resonant peak of the transmission and reflectance spectra as GaAs is consistent with photo-elastic phenomenon at high pressure. The transfer matrix method (TMM) is developed for the proposed architecture to characterise the spectra due to the change in refractive index (RI), which is varied with the variation of pressure. Very high pressure from 5 to 15 GPa is considered for simulation in the form of material’s RI which finally leads to shift the resonant peak near the smaller wavelength. The detailed FEM analysis for the proposed designed was completed to optimize the number of layers and their width. A very high sensitivity of 3.3429 nm/GPa at an external applied pressure of 15 GPa was observed in our proposed design. This design holds promise for applications in tunable filters and high-pressure environments, such as hydrostatic pressure sensors.