Scholarlink

<p>Ultraviolet (UV) photodetectors based on engineered semiconductor interfaces have gained significant attention for applications in environmental monitoring, optical communication, and advanced sensing. In this work, we present a comprehensive comparative study of two heterostructured device architectures ZnO/GeNWs/Si and ZnO/Bi₂O₃-Nsh/Si fabricated using pulsed laser ablation and RF sputtering to elucidate the influence of interface engineering on photodetection performance. Structural and morphological analysis revealed distinct nanostructure formation, where Ge nanowalls produced a highly interconnected network facilitating rapid carrier transport, while Bi₂O₃ nanosheets generated a dense surface coverage that enhanced light absorption and interfacial charge separation. UV–Vis spectroscopy showed bandgap modulation in both heterostructures, with ZnO/GeNWs/Si exhibiting an effective Eg of 3.47&#xa0;eV and ZnO/Bi₂O₃-Nsh/Si showing 3.40&#xa0;eV due to interfacial coupling and defect-mediated transitions. Electrical characterization demonstrated substantially higher photocurrent, responsivity, and gain for the ZnO/Bi₂O₃-Nsh/Si device, achieving up to 20&#xa0;mA at 6&#xa0;V and a responsivity exceeding 49.8&#xa0;A/W, compared to 12.8&#xa0;mA and 31.8&#xa0;A/W for the ZnO/GeNWs/Si photodetector. Time-resolved photoresponse revealed faster rise–decay dynamics in both devices, with ZnO/Bi₂O₃-Nsh/Si exhibiting superior carrier separation due to favorable band alignment and reduced recombination pathways at the Bi₂O₃-Nsh/ZnO interface. The enhanced performance of the Bi₂O₃-based heterostructure is attributed to its higher work function, stronger built-in electric field, and synergistic interface that promotes efficient carrier extraction. These findings provide critical insights into interfacial transport mechanisms and establish ZnO/Bi₂O₃/Si as a promising platform for high-performance UV photodetection.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Interface-engineered ZnO/GeNWs/Si vs. ZnO/Bi₂O₃-Nsh /Si heterostructures for high-performance UV photodetectors: a comprehensive analysis of morphology, bandgap modulation, and charge transport dynamics

  • 期刊论文

  • 发表日期：

    2026年3月27日

查看全文
  • Abdullah Marzouq Alharbi

摘要

Ultraviolet (UV) photodetectors based on engineered semiconductor interfaces have gained significant attention for applications in environmental monitoring, optical communication, and advanced sensing. In this work, we present a comprehensive comparative study of two heterostructured device architectures ZnO/GeNWs/Si and ZnO/Bi₂O₃-Nsh/Si fabricated using pulsed laser ablation and RF sputtering to elucidate the influence of interface engineering on photodetection performance. Structural and morphological analysis revealed distinct nanostructure formation, where Ge nanowalls produced a highly interconnected network facilitating rapid carrier transport, while Bi₂O₃ nanosheets generated a dense surface coverage that enhanced light absorption and interfacial charge separation. UV–Vis spectroscopy showed bandgap modulation in both heterostructures, with ZnO/GeNWs/Si exhibiting an effective Eg of 3.47 eV and ZnO/Bi₂O₃-Nsh/Si showing 3.40 eV due to interfacial coupling and defect-mediated transitions. Electrical characterization demonstrated substantially higher photocurrent, responsivity, and gain for the ZnO/Bi₂O₃-Nsh/Si device, achieving up to 20 mA at 6 V and a responsivity exceeding 49.8 A/W, compared to 12.8 mA and 31.8 A/W for the ZnO/GeNWs/Si photodetector. Time-resolved photoresponse revealed faster rise–decay dynamics in both devices, with ZnO/Bi₂O₃-Nsh/Si exhibiting superior carrier separation due to favorable band alignment and reduced recombination pathways at the Bi₂O₃-Nsh/ZnO interface. The enhanced performance of the Bi₂O₃-based heterostructure is attributed to its higher work function, stronger built-in electric field, and synergistic interface that promotes efficient carrier extraction. These findings provide critical insights into interfacial transport mechanisms and establish ZnO/Bi₂O₃/Si as a promising platform for high-performance UV photodetection.