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<p>In this work, we present a detailed study of argon plasma treated effects on the structural, morphological, optical and electrical properties of thermally evaporated CuPc thin film. The plasma–induced changes were observed to remarkably improve the molecular orientation and crystallinity, consistent with the increasing intensity and sharpening of the (312) reflection in XRD observations. Lowering surface roughness and grain-height fluctuations were observed by AFM, suggesting that efficient surface smoothing was achieved based on the energetic Ar⁺ ion bombardment with a partial molecular rearrangement. Concomitantly, UV–Vis analysis showed evident modifi cation of the absorption spectrum with a small increase in the band gap, which implied change π − π electronic transitions and reduced density of localized states in organic semiconductor. Electrical measurements confirmed that the plasma-treated ZnO layers underwent a p–n transition, which was ascribed to the alteration of the energy levels and improvement of electron conduction away routes. Most significantly, such a plasma-treated CuPc based photodetector showed marked enhancement of the photoresponse. The responsivity increased from 54.92 to 313.48 µA/mW and the EQE from 10.89% to 62.19% with stable rises/decay times (∼0.30&#xa0;s). These factors are directly associated with the better surface morphology and enhanced crystallinity that favorable for efficients generation, extraction and transport of charge. In summary, these results indicate that the appropriately controlled argon-plasma exposure appears to be an effective way of tailoring the optoelectronic properties of CuPc films without significantly affecting their structure. It is believed that the improvement may promise for practical photoelectronic devices as well as high-responsivity organic photodetectors.</p>

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Influence of argon plasma treatment on CuPc thin films and their optoelectronic applications

  • 期刊论文

  • 发表日期：

    2026年1月7日

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  • Zainab Hazim. Abdul Raheem,
  • Mohammed K. Khalaf,
  • Sameer Khudhur Yaseen

摘要

In this work, we present a detailed study of argon plasma treated effects on the structural, morphological, optical and electrical properties of thermally evaporated CuPc thin film. The plasma–induced changes were observed to remarkably improve the molecular orientation and crystallinity, consistent with the increasing intensity and sharpening of the (312) reflection in XRD observations. Lowering surface roughness and grain-height fluctuations were observed by AFM, suggesting that efficient surface smoothing was achieved based on the energetic Ar⁺ ion bombardment with a partial molecular rearrangement. Concomitantly, UV–Vis analysis showed evident modifi cation of the absorption spectrum with a small increase in the band gap, which implied change π − π electronic transitions and reduced density of localized states in organic semiconductor. Electrical measurements confirmed that the plasma-treated ZnO layers underwent a p–n transition, which was ascribed to the alteration of the energy levels and improvement of electron conduction away routes. Most significantly, such a plasma-treated CuPc based photodetector showed marked enhancement of the photoresponse. The responsivity increased from 54.92 to 313.48 µA/mW and the EQE from 10.89% to 62.19% with stable rises/decay times (∼0.30 s). These factors are directly associated with the better surface morphology and enhanced crystallinity that favorable for efficients generation, extraction and transport of charge. In summary, these results indicate that the appropriately controlled argon-plasma exposure appears to be an effective way of tailoring the optoelectronic properties of CuPc films without significantly affecting their structure. It is believed that the improvement may promise for practical photoelectronic devices as well as high-responsivity organic photodetectors.