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<p>This simulation study demonstrates high-performance in GaAs-based 1060 nm laser diodes through epitaxial structure innovation. Replacing strained type-II GaAsSb / InGaAs with lattice-matched GaAsSb / InGaAsSb active regions reduces defects and non-radiative recombination. An asymmetric narrow waveguide optimizes optical confinement and minimizes p-side carrier absorption. A novel strain-compensated GaAsP / InGaAs / GaAsSb / InGaAsSb / GaAsP MQW transforms weak type-II into type-I band alignment, enhancing radiative recombination and internal quantum efficiency (<InlineEquation ID="IEq1"> <EquationSource Format="TEX">\(&gt;99.4\%\)</EquationSource> </InlineEquation>). This is synergized with an asymmetric heterojunction double waveguide (p-AlGaAs/n-GaInAsP) for superior carrier confinement and injection. The optimized design overcomes bandgap limitations and carrier leakage, achieving simulated performance metrics of 6.27 W output power and 85.39% wall-plug efficiency at 6 A–a 49.5% efficiency gain over baselines. This work achieves high simulated performance metrics, establishes a new paradigm for ultra-efficient high-power semiconductor lasers, enabling advanced applications in microelectronics and photonics-driven technologies.</p>

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Design and performance optimization of high-power 1060 nm GaAs laser diodes with strain-compensated active regions and asymmetric waveguides

  • 期刊论文

  • 发表日期：

    2025年11月28日

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  • Yuehang Ding

摘要

This simulation study demonstrates high-performance in GaAs-based 1060 nm laser diodes through epitaxial structure innovation. Replacing strained type-II GaAsSb / InGaAs with lattice-matched GaAsSb / InGaAsSb active regions reduces defects and non-radiative recombination. An asymmetric narrow waveguide optimizes optical confinement and minimizes p-side carrier absorption. A novel strain-compensated GaAsP / InGaAs / GaAsSb / InGaAsSb / GaAsP MQW transforms weak type-II into type-I band alignment, enhancing radiative recombination and internal quantum efficiency ( \(>99.4\%\) ). This is synergized with an asymmetric heterojunction double waveguide (p-AlGaAs/n-GaInAsP) for superior carrier confinement and injection. The optimized design overcomes bandgap limitations and carrier leakage, achieving simulated performance metrics of 6.27 W output power and 85.39% wall-plug efficiency at 6 A–a 49.5% efficiency gain over baselines. This work achieves high simulated performance metrics, establishes a new paradigm for ultra-efficient high-power semiconductor lasers, enabling advanced applications in microelectronics and photonics-driven technologies.