High-performance porous silicon spectral responsivity enhanced with laser-ablated silver nanoparticles via spray pyrolysis
摘要
In this work, p-type (100) and n-type (100) silicon wafers were used to synthesize porous silicon PS1 and PS2 via electrochemical etching. Silver nanoparticles (Ag-NPs) were Synthesized by the laser ablation technique and uniformly deposited to the porous substrates using the spray pyrolysis. Field emission scanning electron microscopy (FESEM) revealed that the average pore sizes of PS1 and PS2 were 12.41 nm and 16.67 nm, respectively. X-ray diffraction (XRD) reflections at 2θ = 69.34° confirmed the creation of PS1 and PS2 surfaces. Fourier-transform infrared spectroscopy (FTIR) showed Si-H2 and Si-O-Si vibrational bands at 2079, 904 cm− 1 for PS1 and 619, 1045 cm− 1 for PS2. Ultraviolet-visible (UV-Vis) spectroscopy confirmed the synthesis of Ag-NPs, exhibiting an intense peak near 400 nm. FESEM revealed that the Ag-NPs had an average diameter of 15.95 nm. Energy dispersive X-ray spectroscopy (EDS) indicated Ag contents of 1.88% (PS1- Ag-NPs) and 2.03% (PS2- Ag-NPs). Electrical measurements showed significant photodetector performance improvements under a bias voltage of 0 to + 5 V. Graphite paste provided stable ohmic contact, enhancing the photodetector’s efficiency and reliability. At + 5 V, the sensitivity of graphite/PS1- Ag-NPs/graphite increased from 400.69 to 700.17% and from 336.82 to 427.32% at 16 mw.cm− 2 and 4 mw.cm− 2, respectively, as compared to graphite/PS1/graphite. In addition, the graphite/PS2- Ag-NPs/graphite photodetector exhibited an increase from 845.41 to 2309.63% and from 484.12 to 2004.21% as compared to graphite/PS2/graphite under the same conditions. I-T measurements showed that PS2-Ag-NPs had faster response (139 µs) and recovery (117 µs) times than PS1- Ag-NPs (176 µs and 142 µs), due to its larger pore size and smaller, uniform Ag-NPs. These results demonstrated that PS2- Ag-NPs exhibited the most remarkable enhancement in its sensitivity, positioning it as a promising material for optoelectronic applications.