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<p>A primary objective of this investigation is to enhance the performance of silicon Heterojunction solar cells through numerical simulations derived from experimental data. This work concentrates on a comprehensive analysis of how varying parameters such as absorber layer thickness, doping and defect densities influence the output parameters of the studied cell, both with and without the integration of the Back Surface Field (BSF). The findings of this investigation lead to the conclusion: by incorporating a BSF layer beyond a crystalline silicon absorber layer of only 100&#xa0;μm thickness, with a doping density of 10<sup>17</sup>&#xa0;cm<sup>−3</sup>, and a defect density of N<sub>t</sub> = 3.10<sup>10</sup>&#xa0;cm<sup>−3</sup>, an efficiency of 24.70% can be achieved. Under these specified conditions, the photogenerated charge carriers exhibit a prolonged lifetime τ<sub>n,p</sub> = 330&#xa0;μs. These results underscore the significance of a back surface field in conjunction with optimized parameters for achieving enhanced efficiency and cost-effectiveness in silicon HIT solar cells.</p>

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Reduction of crystalline silicon absorber layer thickness in HIT solar cells

  • 期刊论文

  • 发表日期：

    2025年7月13日

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  • Fatiha Azzemou,
  • Wassila Leila Rahal,
  • Djaaffar Rached

摘要

A primary objective of this investigation is to enhance the performance of silicon Heterojunction solar cells through numerical simulations derived from experimental data. This work concentrates on a comprehensive analysis of how varying parameters such as absorber layer thickness, doping and defect densities influence the output parameters of the studied cell, both with and without the integration of the Back Surface Field (BSF). The findings of this investigation lead to the conclusion: by incorporating a BSF layer beyond a crystalline silicon absorber layer of only 100 μm thickness, with a doping density of 1017 cm−3, and a defect density of Nt = 3.1010 cm−3, an efficiency of 24.70% can be achieved. Under these specified conditions, the photogenerated charge carriers exhibit a prolonged lifetime τn,p = 330 μs. These results underscore the significance of a back surface field in conjunction with optimized parameters for achieving enhanced efficiency and cost-effectiveness in silicon HIT solar cells.