<p>A semi-organic nickel-incorporated <sub>L</sub>-arginine phosphate monohydrate (Ni-LAP) single crystal was successfully grown using the slow evaporation solution method, achieving a size of 16 × 9 × 4&#xa0;mm³. X-ray diffraction (XRD) analysis confirmed its monoclinic crystal structure (P2₁ space group), and energy-dispersive spectroscopy (EDS) verified Ni²⁺ ion incorporation. UV-visible spectroscopy demonstrated high optical transmittance (94.93% over 200–900&#xa0;nm) with a UV cutoff at 217.60&#xa0;nm. Photoluminescence (PL) analysis revealed strong violet emission (375&#xa0;nm peak), indicating its suitability for photonic applications. The Z-scan technique confirmed third-order nonlinear optical (TONLO) properties, showing a nonlinear refractive index (n<sub>2</sub> = 0.09608 × 10<sup>− 12</sup>&#xa0;m²/W), a nonlinear absorption coefficient (β = 0.1928 × 10<sup>− 5</sup> m/W), and a third-order nonlinear susceptibility (χ<sup>3</sup> = 11.069 × 10<sup>− 10</sup> esu). These properties suggest its potential for optical limiting, switching, and photonic device applications. The laser-induced damage threshold (LIDT) was determined as 47.90 GW/cm<sup>2</sup>, indicating strong resistance to laser damage, surpassing KDP and pure LAP crystals. Density Functional Theory (DFT) calculations optimized the molecular structure and confirmed electronic stability with a HOMO-LUMO energy gap of 3.205&#xa0;eV. Etching studies revealed minimal surface defects, supporting its high-quality crystalline nature. The combination of excellent optical transparency, strong nonlinear optical response, and high laser damage threshold makes Ni-LAP a promising candidate for advanced photonic, optoelectronic, and laser applications.</p>

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Ni²⁺-incorporated L-arginine phosphate crystals: growth, optical performance, and nonlinear optical properties for photonic device development

  • S. A. Athawale,
  • V. B. Bhise,
  • G. R. Dhokane,
  • R. M. Belekar

摘要

A semi-organic nickel-incorporated L-arginine phosphate monohydrate (Ni-LAP) single crystal was successfully grown using the slow evaporation solution method, achieving a size of 16 × 9 × 4 mm³. X-ray diffraction (XRD) analysis confirmed its monoclinic crystal structure (P2₁ space group), and energy-dispersive spectroscopy (EDS) verified Ni²⁺ ion incorporation. UV-visible spectroscopy demonstrated high optical transmittance (94.93% over 200–900 nm) with a UV cutoff at 217.60 nm. Photoluminescence (PL) analysis revealed strong violet emission (375 nm peak), indicating its suitability for photonic applications. The Z-scan technique confirmed third-order nonlinear optical (TONLO) properties, showing a nonlinear refractive index (n2 = 0.09608 × 10− 12 m²/W), a nonlinear absorption coefficient (β = 0.1928 × 10− 5 m/W), and a third-order nonlinear susceptibility (χ3 = 11.069 × 10− 10 esu). These properties suggest its potential for optical limiting, switching, and photonic device applications. The laser-induced damage threshold (LIDT) was determined as 47.90 GW/cm2, indicating strong resistance to laser damage, surpassing KDP and pure LAP crystals. Density Functional Theory (DFT) calculations optimized the molecular structure and confirmed electronic stability with a HOMO-LUMO energy gap of 3.205 eV. Etching studies revealed minimal surface defects, supporting its high-quality crystalline nature. The combination of excellent optical transparency, strong nonlinear optical response, and high laser damage threshold makes Ni-LAP a promising candidate for advanced photonic, optoelectronic, and laser applications.