High-efficiency CZTSSe/CIGSe ultra-thin structures for next-generation solar cells with 45.40% efficiency
摘要
This article presents a simulation-based analysis of thin film solar cells made of CZTSSe that incorporate a CIGSe as the bottom absorber layer, with performance analyzed through the SCAPS-1D program. Key factors, including active layer thickness, acceptor density, resistance, and working temperature, were adjusted to enhance performance. Significant improvements were observed: open-circuit voltage (VOC) increased from 0.7136 to 1.27 V, short-circuit current density (JSC) rose from 42.63 to 46.62 mA/cm2, fill factor (FF) improved from 74.25 to 76.57%, and efficiency (η) surged from 22.59 to 45.40%. This novel implementation of a double absorber structure significantly reduces recombination losses, leading to improved charge carrier collection and enhanced solar cell efficiency. The study presents a simulation of ultra-thin CZTSSe and CIGSe-based solar cells, highlighting their potential for the development of low-cost, high-efficiency photovoltaic devices.