<p>This study presents a numerical simulation of solar cells based on Cu<sub>2</sub>SnS<sub>3</sub> (CTS) and Cu<sub>2</sub>ZnSnS<sub>4</sub> (CZTS) using SCAPS-1D software. The investigation focuses on the effects of various parameters, including the thickness and doping density of absorber layers and operating temperature, on the performance of photovoltaic parameters (short-circuit current density, open-circuit voltage, fill factor, and efficiency). The primary objective is to identify the critical parameters that influence solar cell efficiency, minimize losses, and optimize conditions for maximum performance. Our simulations achieved efficiencies of 9.49% for SLG/MoS<sub>2</sub>/CTS/CdS/ZnO and 14.60% for SLG/MoS<sub>2</sub>/CZTS/CdS/ZnO solar cells when the thickness of the absorber layer is 2.5&#xa0;μm for both cells. These highest values of efficiency also were obtained when the doping density N<sub>A</sub> value were 10<sup>16</sup>&#xa0;cm<sup>−3</sup> and a working temperature of 280K.</p>

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Efficiency improvements in Cu2ZnSnS4 and Cu2SnS3: a comparative study

  • F. Belarbi,
  • W. L. Rahal,
  • D. Rached,
  • M. Adnane,
  • A. Djelloul

摘要

This study presents a numerical simulation of solar cells based on Cu2SnS3 (CTS) and Cu2ZnSnS4 (CZTS) using SCAPS-1D software. The investigation focuses on the effects of various parameters, including the thickness and doping density of absorber layers and operating temperature, on the performance of photovoltaic parameters (short-circuit current density, open-circuit voltage, fill factor, and efficiency). The primary objective is to identify the critical parameters that influence solar cell efficiency, minimize losses, and optimize conditions for maximum performance. Our simulations achieved efficiencies of 9.49% for SLG/MoS2/CTS/CdS/ZnO and 14.60% for SLG/MoS2/CZTS/CdS/ZnO solar cells when the thickness of the absorber layer is 2.5 μm for both cells. These highest values of efficiency also were obtained when the doping density NA value were 1016 cm−3 and a working temperature of 280K.