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<p>The highly efficient III-V compound materials has empowered the growth of GaAsP/Si two terminal solar cell to exceed the efficiency of the cell beyond Shockley–Quiesser limit. The lattice mismatching between the III-V compound and Si subcells leads to the Threading Dislocation density and poor current matching, which can be improved by adding buffer layers. The lower bandgap material has good absorption property in the 300–650&#xa0;nm wavelength of spectrum. Therefore, it is best suit to design with Si cell, Since the Si solar cell has absorption property in 600–1100&#xa0;nm wavelength of spectrum. Also, the window and buffer layers can extend the spectrum utilization by using optimization techniques. In this research work, improved design of the GaAs<sub>0.95</sub>P<sub>0.05</sub>/Si dual junction solar cell is presented. The TDDs are reduced by increasing the misfit length and optimization of the design. Firstly, we have reduced the bandgap of 1&#xa0;µm thick GaAsP top cell from 1.72 to 1.48&#xa0;eV in order to obtain the higher cell current. Recombination was observed near the junction, which is reduced by buffer layers. The buffer layer is also used as the window/cap layer over the GaAsP top cell. The performance enhancement is observed by reducing the thickness of the window layer. The current matching is further improved by optimizing the doping concentration of p-Si window layer of the bottom cell. The wafer based 180&#xa0;µm thick c-Si cell with passivated layer is used as bottom cell. The remarkable power conversion efficiency of 32.23% is realized by the cell in standard 1-SUN AM1.5G environment. This work is related with numerical optimization of proposed tandem solar cell using SILVACO TCAD simulation Tool. The performance of the cell is higher than the previously reported structures.</p>

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Bandgap engineering and passivation in top and bottom layer of GaAsP/Si tandem solar cell for efficiency improvement

  • 期刊论文

  • 发表日期：

    2025年6月12日

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  • Manish Verma,
  • Girija Shankar Sahoo,
  • Guru Prasad Mishra

摘要

The highly efficient III-V compound materials has empowered the growth of GaAsP/Si two terminal solar cell to exceed the efficiency of the cell beyond Shockley–Quiesser limit. The lattice mismatching between the III-V compound and Si subcells leads to the Threading Dislocation density and poor current matching, which can be improved by adding buffer layers. The lower bandgap material has good absorption property in the 300–650 nm wavelength of spectrum. Therefore, it is best suit to design with Si cell, Since the Si solar cell has absorption property in 600–1100 nm wavelength of spectrum. Also, the window and buffer layers can extend the spectrum utilization by using optimization techniques. In this research work, improved design of the GaAs0.95P0.05/Si dual junction solar cell is presented. The TDDs are reduced by increasing the misfit length and optimization of the design. Firstly, we have reduced the bandgap of 1 µm thick GaAsP top cell from 1.72 to 1.48 eV in order to obtain the higher cell current. Recombination was observed near the junction, which is reduced by buffer layers. The buffer layer is also used as the window/cap layer over the GaAsP top cell. The performance enhancement is observed by reducing the thickness of the window layer. The current matching is further improved by optimizing the doping concentration of p-Si window layer of the bottom cell. The wafer based 180 µm thick c-Si cell with passivated layer is used as bottom cell. The remarkable power conversion efficiency of 32.23% is realized by the cell in standard 1-SUN AM1.5G environment. This work is related with numerical optimization of proposed tandem solar cell using SILVACO TCAD simulation Tool. The performance of the cell is higher than the previously reported structures.