<p>All inorganic double metal perovskite materials have recently drawn much attention due to their three dimensionality (3D) and non-toxic nature to replace lead-based perovskite material. Among all those double perovskite materials, theoretical works have demonstrated that Cs₂AgBiBr6 possesses suitable band gap for many applications. Due to the instability of perovskite materials, changed the concentration of silver and bismuth to get the best results. In this work, thin films were prepared using spray pyrolysis technique. X-ray diffraction measurements shows that films prepared by this method is Cs₂AgBiBr6 showing a lead-free halide double perovskite structure and polycrystalline nature of the cubic structure for sample P(112) and the cubic elpasolite structure for samples P(111) and P(121). The electrical properties align well with the optical behavior which P(112) is the most efficient at both absorbing light and conducting charges while P(111) has high mobility but lower carrier concentration, resulting in relatively low absorbance. Optical measurements show that P(111), P(121), and P(112) thin films have an indirect allowed energy gap at a minimum value 3.09&#xa0;eV for P(111). Furthermore, our results revealed different electrical and optical properties. Our work opens the way to a new class of perovskites with significant potential for optoelectronic applications at the lowest cost.</p>