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<p>This study comprehensively explores the potential of tin dioxide (SnO₂) thin films as UV photodetectors. The films were meticulously fabricated using the hydrothermal method on a seed layer of glass substrates and Si (100) by varying the preparation time and temperature. X-ray diffraction (XRD) tests confirmed the dominant presence of tetragonal SnO₂ crystal structures in the prepared films. The field emission scanning electron microscopy (FESEM) images revealed that the particles were mainly spherical, with noticeable size variations depending on the preparation conditions. The energy-dispersive X-ray (EDX) spectrum provided compositional details, indicating that the tin: oxygen ratio varies with preparation time and temperature. The optical measurements revealed distinct bandgap values along with high UV quantum efficiency (QE) at 350&#xa0;nm. Notably, films prepared for 6&#xa0;h exhibited the highest photosensitivity (45.54%), maximum QE (1156.92%), and high responsivity of 3.265&#xa0;A/W, with a rise and fall time of less than 1&#xa0;s. The photoconductivity results demonstrate the potential of SnO₂/p-Si thin films for use in optoelectronic circuits and UV sensors, underscoring their potential for advancing UV photodetector technologies.</p>

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Fabrication and study of the optical and structural properties of SnO2 thin films as Efficient UV detectors

  • 期刊论文

  • 发表日期：

    2025年2月15日

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  • Abd alhameed A. Hameed,
  • Isam M. Ibrahim,
  • J. F. Mohammad

摘要

This study comprehensively explores the potential of tin dioxide (SnO₂) thin films as UV photodetectors. The films were meticulously fabricated using the hydrothermal method on a seed layer of glass substrates and Si (100) by varying the preparation time and temperature. X-ray diffraction (XRD) tests confirmed the dominant presence of tetragonal SnO₂ crystal structures in the prepared films. The field emission scanning electron microscopy (FESEM) images revealed that the particles were mainly spherical, with noticeable size variations depending on the preparation conditions. The energy-dispersive X-ray (EDX) spectrum provided compositional details, indicating that the tin: oxygen ratio varies with preparation time and temperature. The optical measurements revealed distinct bandgap values along with high UV quantum efficiency (QE) at 350 nm. Notably, films prepared for 6 h exhibited the highest photosensitivity (45.54%), maximum QE (1156.92%), and high responsivity of 3.265 A/W, with a rise and fall time of less than 1 s. The photoconductivity results demonstrate the potential of SnO₂/p-Si thin films for use in optoelectronic circuits and UV sensors, underscoring their potential for advancing UV photodetector technologies.