Scholarlink

<p>This study investigates the numerical simulation of lanthanide (Ln<sup>3+</sup>) doped nontoxic tin-based (CH<sub>3</sub>NH<sub>3</sub>SnI<sub>3</sub>) Perovskite Solar Cells (PSCs) using the SCAPS 1D simulation program. In this study, Aluminium-doped zinc oxide is employed as a buffering layer. The numerical simulation of PSC under varying conditions of temperature, perovskite layer thickness, interface effects, and defect density variation. This study also provides the analysis of leakage and contactresistance that exhibits the Jscof 29.52&#xa0;mA/cm<sup>2</sup>, Vocof 0.92&#xa0;V Fill Factor (FF)&#xa0;of&#xa0;79.20%,&#xa0;and Power Conver<Emphasis Type="BoldItalic">s</Emphasis>ion Efficiency&#xa0;(PCE)&#xa0;of 21.53%. We have also reported that without adding contact and leakage resistance, the PSC achieved enhanced Jsc of&#xa0;29.55&#xa0;mA/cm<sup>2</sup>,PCE of&#xa0;22.26%,FF of&#xa0;81.85%, and unchanged V<sub>OC</sub> of 0.92&#xa0;V. Therefore, this work gives a significant analysis of defect density and interface effects and it also highlights the influence of leakage and contact resistance with the highest achieved (PCE) of 21.53%.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Study of ZnO nanorod-based lead-free perovskite solar cell using AZO as a buffer layer

  • 期刊论文

  • 发表日期：

    2025年1月17日

查看全文
  • Ankita Kumari,
  • Bramha P. Pandey

摘要

This study investigates the numerical simulation of lanthanide (Ln3+) doped nontoxic tin-based (CH3NH3SnI3) Perovskite Solar Cells (PSCs) using the SCAPS 1D simulation program. In this study, Aluminium-doped zinc oxide is employed as a buffering layer. The numerical simulation of PSC under varying conditions of temperature, perovskite layer thickness, interface effects, and defect density variation. This study also provides the analysis of leakage and contactresistance that exhibits the Jscof 29.52 mA/cm2, Vocof 0.92 V Fill Factor (FF) of 79.20%, and Power Conversion Efficiency (PCE) of 21.53%. We have also reported that without adding contact and leakage resistance, the PSC achieved enhanced Jsc of 29.55 mA/cm2,PCE of 22.26%,FF of 81.85%, and unchanged VOC of 0.92 V. Therefore, this work gives a significant analysis of defect density and interface effects and it also highlights the influence of leakage and contact resistance with the highest achieved (PCE) of 21.53%.