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<p>While a significant part of the solar energy lies in the infrared range, common semiconductors cannot absorb this part of the solar irradiance by direct band-to-band transitions, because the corresponding photon energies are below the bandgap energy. Two-step photon up-conversion (TPU) is one of the processes that allows us to harvest energy in the region below the bandgap, and one possible approach to realize a TPU-based solar cell is to use an AlGaAs/GaAs heterointerface with quantum dots in order to induce additional intraband transitions. On the other hand, here we report on the TPU phenomenon at a methylammonium lead bromide/gallium arsenide (MAPbBr<sub>3</sub>/GaAs) heterointerface without quantum dots. For this heterojunction, we observed high-energy photoemission by low-energy photoinjection, demonstrating the TPU. By using photoluminescence (PL) and time-resolved PL measurement techniques, we elucidate the mechanism of the PL emission from MAPbBr<sub>3</sub> observed from MAPbBr<sub>3</sub>/GaAs samples. Through the comparisons of the experimental PL and TRPL results between the MAPbBr<sub>3</sub>/GaAs and MAPbBr<sub>3</sub>/Glass-substrate samples, we successfully distinguish the TPU phenomenon from the ordinal two-photon absorption of MAPbBr<sub>3</sub>. Our findings in the TPU at the&#xa0;MAPbBr<sub>3</sub>/GaAs heterointerface may help to realize quantum-dot-free photon up-conversion solar cells.</p>

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Nonlinear photoexcitation processes at a MAPbBr3/GaAs heterointerface

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年1月15日

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  • Hambalee Mahamu,
  • Matthias Bourzier,
  • Shigeo Asahi,
  • Takashi Kita

摘要

While a significant part of the solar energy lies in the infrared range, common semiconductors cannot absorb this part of the solar irradiance by direct band-to-band transitions, because the corresponding photon energies are below the bandgap energy. Two-step photon up-conversion (TPU) is one of the processes that allows us to harvest energy in the region below the bandgap, and one possible approach to realize a TPU-based solar cell is to use an AlGaAs/GaAs heterointerface with quantum dots in order to induce additional intraband transitions. On the other hand, here we report on the TPU phenomenon at a methylammonium lead bromide/gallium arsenide (MAPbBr3/GaAs) heterointerface without quantum dots. For this heterojunction, we observed high-energy photoemission by low-energy photoinjection, demonstrating the TPU. By using photoluminescence (PL) and time-resolved PL measurement techniques, we elucidate the mechanism of the PL emission from MAPbBr3 observed from MAPbBr3/GaAs samples. Through the comparisons of the experimental PL and TRPL results between the MAPbBr3/GaAs and MAPbBr3/Glass-substrate samples, we successfully distinguish the TPU phenomenon from the ordinal two-photon absorption of MAPbBr3. Our findings in the TPU at the MAPbBr3/GaAs heterointerface may help to realize quantum-dot-free photon up-conversion solar cells.