Numerical Simulation and Mass Transfer Analysis of Ultrasound-Enhanced Metal-Assisted Chemical Etching for Silicon Nanopore Fabrication
摘要
This study aims to characterize the numerical simulation and mass transfer properties of ultrasound-enhanced metal-assisted chemical etching (MACE) for fabricating silicon nanopore (SiNP) arrays. Firstly, the experimental setup for ultrasound-enhanced MACE is established and the uniform SiNP arrays are successfully etched. Results indicate that the etching rate (RSi) increases significantly with temperature, HF molar concentration, and the application of ultrasound. The relationships of ln RSi with ln cHF and 1/T are determined, and thus the surface reaction rate is derived. The effects of ultrasonic and geometric parameters on fluid velocity and mass transfer coefficient (kc) are evaluated. kc is significantly dependent on the ultrasonic power, and by applying ultrasound, kc can be improved by more than an order of magnitude. The kc of perpendicular arrangement is obviously higher than that of parallel arrangement. This work helps provide guidance for the fabrication of SiNP arrays and promotes their applications.