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<p>This study presents a comprehensive three-dimensional unsteady computational fluid dynamics (CFD) investigation into the transient slurry transport mechanisms within a 300&#xa0;mm silicon dioxide (SiO₂) chemical mechanical polishing (CMP) system. The numerical model incorporates realistic pad groove geometries and detailed retaining ring slots to accurately capture slurry flow. Six simulation cases were analyzed under varying platen/head rotational speeds and slurry flow rates. Results indicate that accelerated pad rotation induces significant centrifugal thinning of the slurry film, while increased flow rates facilitate a broader radial footprint of slurry near the intake. Slurry recirculation zones were observed within the wafer-pad gap, decreasing in intensity at higher velocities. Furthermore, the simulations established a robust spatial correlation between the predicted slurry volume fraction and experimental material removal rates (MRR). These insights provide a physical basis for optimizing slurry delivery efficiency and mitigating within-wafer non-uniformity (WIWNU) in advanced semiconductor manufacturing processes.</p>

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Unsteady Multiphase CFD Analysis of Slurry Flow in a 300 mm CMP System: Effect of Rotation Speed and Slurry Flow Rate

  • 期刊论文

  • 发表日期：

    2026年7月6日

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  • Doyun An,
  • Munyoung Hong,
  • Hyunjoon Park,
  • Hong Jin Kim,
  • Hyunki Kim,
  • Hyunseop Lee,
  • Jin Lee

摘要

This study presents a comprehensive three-dimensional unsteady computational fluid dynamics (CFD) investigation into the transient slurry transport mechanisms within a 300 mm silicon dioxide (SiO₂) chemical mechanical polishing (CMP) system. The numerical model incorporates realistic pad groove geometries and detailed retaining ring slots to accurately capture slurry flow. Six simulation cases were analyzed under varying platen/head rotational speeds and slurry flow rates. Results indicate that accelerated pad rotation induces significant centrifugal thinning of the slurry film, while increased flow rates facilitate a broader radial footprint of slurry near the intake. Slurry recirculation zones were observed within the wafer-pad gap, decreasing in intensity at higher velocities. Furthermore, the simulations established a robust spatial correlation between the predicted slurry volume fraction and experimental material removal rates (MRR). These insights provide a physical basis for optimizing slurry delivery efficiency and mitigating within-wafer non-uniformity (WIWNU) in advanced semiconductor manufacturing processes.