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<p>Ultraviolet light-assisted chemical mechanical polishing (UV-CMP) is an ultra-precision machining process that combines ultraviolet light-activated chemical polishing fluid with mechanical action. A molecular dynamics model of abrasive particles polishing the monocrystalline silicon surface was established to study the mechanism of material removal at the microscopic level. Simulation data revealed that the material removal rate of abrasive particles scratching the monocrystalline silicon surface with an oxide layer was 17.6% higher than that without an oxide layer. After 60&#xa0;min of grinding, the experimental and simulation results showed consistent trends. Under the ultraviolet light-Fenton composite polishing process, the surface roughness of monocrystalline silicon reached 86&#xa0;nm, and the material removal rate increased by 89.7% compared to traditional chemical mechanical polishing.</p>

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Mechanism and Verification of Ultraviolet Light-Fenton Composite Polishing of Monocrystalline Silicon

  • 期刊论文

  • 发表日期：

    2026年5月26日

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  • Yan Wang,
  • Lihao Shen,
  • Junan Li,
  • Dongxu Liu,
  • Honglin Hao

摘要

Ultraviolet light-assisted chemical mechanical polishing (UV-CMP) is an ultra-precision machining process that combines ultraviolet light-activated chemical polishing fluid with mechanical action. A molecular dynamics model of abrasive particles polishing the monocrystalline silicon surface was established to study the mechanism of material removal at the microscopic level. Simulation data revealed that the material removal rate of abrasive particles scratching the monocrystalline silicon surface with an oxide layer was 17.6% higher than that without an oxide layer. After 60 min of grinding, the experimental and simulation results showed consistent trends. Under the ultraviolet light-Fenton composite polishing process, the surface roughness of monocrystalline silicon reached 86 nm, and the material removal rate increased by 89.7% compared to traditional chemical mechanical polishing.