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<p>Silicon carbide (SiC) is a promising wide bandgap semiconductor, with superior material properties that allow power devices to function at higher temperatures and voltages, offering significant advantages over conventional silicon-based devices. Achieving atomically smooth surfaces is a critical requirement for SiC applications, typically accomplished through chemical mechanical polishing (CMP). Despite its effectiveness, current CMP processes face challenges like low material removal rates, limiting their suitability for industrial-scale applications. Improving CMP performance has become a key focus of current research. In this review, we first introduce the properties of SiC and provide essential information about CMP. We then comprehensively present recent advancements in both traditional and energy-field-assisted CMP methods for SiC. Critical issues in existing CMP processes are discussed and summarized, with future strategies for sustainable development proposed. This review offers a new perspective on SiC processing and additional insights for future research to realize its development and commercial viability.</p>

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Traditional and Energy-Field-Assisted Methods for Chemical Mechanical Polishing of Silicon Carbide: Mechanisms and Processability

  • 期刊论文

  • 发表日期：

    2026年2月9日

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  • Yibo Wu,
  • Shujing Wu,
  • Dazhong Wang,
  • Yirun Song,
  • Jiapeng Chen,
  • Jianbao Wu,
  • Akiyama Takao

摘要

Silicon carbide (SiC) is a promising wide bandgap semiconductor, with superior material properties that allow power devices to function at higher temperatures and voltages, offering significant advantages over conventional silicon-based devices. Achieving atomically smooth surfaces is a critical requirement for SiC applications, typically accomplished through chemical mechanical polishing (CMP). Despite its effectiveness, current CMP processes face challenges like low material removal rates, limiting their suitability for industrial-scale applications. Improving CMP performance has become a key focus of current research. In this review, we first introduce the properties of SiC and provide essential information about CMP. We then comprehensively present recent advancements in both traditional and energy-field-assisted CMP methods for SiC. Critical issues in existing CMP processes are discussed and summarized, with future strategies for sustainable development proposed. This review offers a new perspective on SiC processing and additional insights for future research to realize its development and commercial viability.