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<p>This study develops a novel theoretical framework for analyzing plane wave propagation in semiconductor media by integrating nonlocal elasticity, multi-temperature thermoelastic theory, and fractional-order photoacoustic dynamics. To address these limitations, we propose a new multi-field formulation that simultaneously captures the effects of nonlocal mechanical response, multiple temperature fields, and higher-order spatial derivatives in the constitutive relations. The governing equations are developed using a generalized photoacoustic framework with higher-order spatial gradients and nonlocal stress–strain relations. These coupled equations are solved analytically via the normal mode technique, yielding a dispersion relation that captures the effects of nonlocality, thermal coupling, and higher-order mechanics. Numerical simulations reveal significant modifications in wave dispersion and attenuation characteristics, particularly at micro- and nanoscale regimes. The findings underscore the critical role of advanced modeling in accurately predicting photoacoustic behavior in semiconductor devices, providing new insights for optoelectronic design and diagnostic applications.</p>

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Fractional and nonlocal modeling of photoacoustic plane waves in multi-temperature semiconductor media

  • 期刊论文

  • 发表日期：

    2025年8月21日

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  • M. Adel,
  • Amr M. S. Mahdy,
  • Alaa A. El-Bary,
  • Khaled Lotfy

摘要

This study develops a novel theoretical framework for analyzing plane wave propagation in semiconductor media by integrating nonlocal elasticity, multi-temperature thermoelastic theory, and fractional-order photoacoustic dynamics. To address these limitations, we propose a new multi-field formulation that simultaneously captures the effects of nonlocal mechanical response, multiple temperature fields, and higher-order spatial derivatives in the constitutive relations. The governing equations are developed using a generalized photoacoustic framework with higher-order spatial gradients and nonlocal stress–strain relations. These coupled equations are solved analytically via the normal mode technique, yielding a dispersion relation that captures the effects of nonlocality, thermal coupling, and higher-order mechanics. Numerical simulations reveal significant modifications in wave dispersion and attenuation characteristics, particularly at micro- and nanoscale regimes. The findings underscore the critical role of advanced modeling in accurately predicting photoacoustic behavior in semiconductor devices, providing new insights for optoelectronic design and diagnostic applications.