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<p>This paper analyses the performance of a new fin field-effect transistor (FinFET) for two undesirable effects, such as self-heating and hot carrier effects. Two effects often degrade the device performance. This paper proposes a new FinFET architecture as dual gate dielectrics heterodielectric buried-oxide (HDB) FinFET. The HDB consists of SiO<sub>2</sub> and HfO<sub>2</sub> dielectrics, placed laterally. The use of HfO<sub>2</sub> with SiO<sub>2</sub> in the buried-oxide (BOX) increases the thermal conductivity, due to which the introduced structure demonstrates less self-heating effect on device characteristics. Similarly, the incorporation of HfO<sub>2</sub> beneath the drain lowers the band gap narrowing in the channel<InlineEquation ID="IEq1"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="12043_2025_2998_Article_IEq1.gif" Format="GIF" Height="19" Rendition="HTML" Resolution="72" Type="Linedraw" Width="14" /> </InlineMediaObject> <EquationSource Format="TEX">\(/\)</EquationSource> <EquationSource Format="MATHML"><math> <mo stretchy="false">/</mo> </math></EquationSource> </InlineEquation>drain region, resulting in reduced hot carrier degradation effect. To analyse the performance, the self-heating effect and the hot carrier effect is compared between the conventional and HDB FinFET. The proposed HDB FinFET is found to be better than the conventional FinFET and hence, a detailed analysis on self-heating and the hot carrier effects is performed by varying the different dimensions of the BOX, fin and work function of gate material.</p>

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A simulation study on optimizing the self-heating and hot carrier effects using heterodielectric buried-oxide FinFETs

  • 期刊论文

  • 发表日期：

    2025年10月16日

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  • Rajashree Das

摘要

This paper analyses the performance of a new fin field-effect transistor (FinFET) for two undesirable effects, such as self-heating and hot carrier effects. Two effects often degrade the device performance. This paper proposes a new FinFET architecture as dual gate dielectrics heterodielectric buried-oxide (HDB) FinFET. The HDB consists of SiO2 and HfO2 dielectrics, placed laterally. The use of HfO2 with SiO2 in the buried-oxide (BOX) increases the thermal conductivity, due to which the introduced structure demonstrates less self-heating effect on device characteristics. Similarly, the incorporation of HfO2 beneath the drain lowers the band gap narrowing in the channel \(/\) / drain region, resulting in reduced hot carrier degradation effect. To analyse the performance, the self-heating effect and the hot carrier effect is compared between the conventional and HDB FinFET. The proposed HDB FinFET is found to be better than the conventional FinFET and hence, a detailed analysis on self-heating and the hot carrier effects is performed by varying the different dimensions of the BOX, fin and work function of gate material.