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<p>The non-toxic and earth-abundant kesterite Cu<sub>2</sub>ZnSnSe<sub>4</sub> (CZTSe) is a potential replacement for chalcopyrite copper indium gallium selenide (CIGS) in photovoltaic (PV) applications. This study employs CuSbSe<sub>2</sub> as a back-surface field (BSF) and ZrS<sub>2</sub> and In<sub>2</sub>S<sub>3</sub> as buffer layers, providing insight into a novel approach to enhance the performance of kesterite solar cells. It focuses&#xa0;on energy band alignment and the reduction of recombination losses to increase the open-circuit voltage (Voc). The proposed cells are Ni/CuSbSe<sub>2</sub>/CZTSe/In<sub>2</sub>S<sub>3</sub>/TCO/Al and Ni/CuSbSe<sub>2</sub>/CZTSe/ZrS<sub>2</sub>/ TCO/Al, along with the interface layers. The results show a short-circuit current density (<i>J</i><sub>sc</sub>) of 43.147&#xa0;mA/cm<sup>2</sup>, fill factor (FF) of 86.16%, power conversion efficiency (PCE) of 30.51%, and <i>V</i><sub>oc</sub> of 0.820&#xa0;V for the optimized CZTSe SCs with In<sub>2</sub>S<sub>3</sub> as a buffer layer. However, the optimized PSC with a ZrS<sub>2</sub> buffer layer shows a PCE, FF, <i>J</i><sub>sc</sub>, and <i>V</i><sub>oc</sub> of 29.27%, 84.04%, 43.470&#xa0;mA/cm<sup>2</sup>, and 0.801&#xa0;V, respectively. The optimized values of the thickness and carrier density for In<sub>2</sub>S<sub>3</sub> used as a buffer layer are 100&#xa0;nm and 10<sup>20</sup>&#xa0;cm<sup>−3</sup>, respectively. However, the optimized thickness and carrier density for ZrS<sub>2</sub> used as a buffer layer are 300&#xa0;nm and 10<sup>19</sup>&#xa0;cm<sup>−3</sup>, respectively. Similarly, the optimized thickness and acceptor density for CuSbSe<sub>2</sub> used as BSF layers are 1000&#xa0;nm and 10<sup>20</sup>&#xa0;cm<sup>−3</sup>, respectively. The results demonstrate the future potential of CZTSe-based PSCs, which outperform traditional structures.</p>

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Simulation Study to Check the Impact of ZrS2 and In2S3 Buffers on CZTSe Solar Cell Performance

  • 期刊论文

  • 发表日期：

    2026年6月1日

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  • Muhammad Suleman,
  • Sofia Akbar Tahir,
  • Shammas Mushtaq,
  • Aqsa Shahbaz,
  • Rasmiah S. Almufarij,
  • Elsammani Ali Shokralla,
  • Arslan Ashfaq

摘要

The non-toxic and earth-abundant kesterite Cu2ZnSnSe4 (CZTSe) is a potential replacement for chalcopyrite copper indium gallium selenide (CIGS) in photovoltaic (PV) applications. This study employs CuSbSe2 as a back-surface field (BSF) and ZrS2 and In2S3 as buffer layers, providing insight into a novel approach to enhance the performance of kesterite solar cells. It focuses on energy band alignment and the reduction of recombination losses to increase the open-circuit voltage (Voc). The proposed cells are Ni/CuSbSe2/CZTSe/In2S3/TCO/Al and Ni/CuSbSe2/CZTSe/ZrS2/ TCO/Al, along with the interface layers. The results show a short-circuit current density (Jsc) of 43.147 mA/cm2, fill factor (FF) of 86.16%, power conversion efficiency (PCE) of 30.51%, and Voc of 0.820 V for the optimized CZTSe SCs with In2S3 as a buffer layer. However, the optimized PSC with a ZrS2 buffer layer shows a PCE, FF, Jsc, and Voc of 29.27%, 84.04%, 43.470 mA/cm2, and 0.801 V, respectively. The optimized values of the thickness and carrier density for In2S3 used as a buffer layer are 100 nm and 1020 cm−3, respectively. However, the optimized thickness and carrier density for ZrS2 used as a buffer layer are 300 nm and 1019 cm−3, respectively. Similarly, the optimized thickness and acceptor density for CuSbSe2 used as BSF layers are 1000 nm and 1020 cm−3, respectively. The results demonstrate the future potential of CZTSe-based PSCs, which outperform traditional structures.