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<p>This study evaluates the effect of the Mg<sub>3</sub>N<sub>2</sub> interlayer on interface characteristics by investigating the electrical, impedance, and dielectric properties of Ag/Mg<sub>3</sub>N<sub>2</sub>/p-Si Schottky diodes. The study specifically aims to reveal the interface trap density (<i>N</i><sub><i>ss</i></sub>), series resistance (<i>R</i><sub><i>s</i></sub>), and frequency-dependent behavior of the dielectric response. The Mg<sub>3</sub>N<sub>2</sub> thin film was deposited on a p-type Si substrate using the thermal evaporation method. Electrical characterizations were performed at room temperature and in the dark; capacitance (<i>C</i>-<i>V</i>) and conductance (<i>G/ω</i>-<i>V</i>) measurements were taken in the 10&#xa0;kHz–5&#xa0;MHz frequency range. The <i>N</i><sub><i>ss</i></sub> was calculated using the Hill-Coleman method, while the complex dielectric constant (<i>ε′</i>, <i>ε″</i>), loss factor (<i>tanδ</i>), electrical modulus (<i>M′</i>, <i>M″</i>), and AC conductivity (<i>σ</i><sub><i>AC</i></sub>) were calculated using standard formulations. The <i>ε</i>′, <i>ε</i>″, tan<i>δ</i>, <i>M′</i>, <i>M″</i>, and <i>σ</i><sub><i>AC</i></sub> values were determined to be 6.91, 7.43, 1.07, 0.06, 0.07 and 4.13 × 10<sup>-6</sup> Ω<sup>-1</sup>.cm<sup>-1</sup> at high frequency (1&#xa0;MHz) and high voltage (+ 3&#xa0;V), while the <i>N</i><sub><i>ss</i></sub> value was on the order of 10<sup>13</sup>&#xa0;eV<sup>-1</sup>·cm<sup>-2</sup>. The study provides important insights into understanding the impact of the Mg<sub>3</sub>N<sub>2</sub> interlayer on SD performance and highlights the potential contributions of such interlayer engineering in electronic device designs.</p>

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Analysis of the Behavior of Ag/Mg3N2/p-Si Schottky Diodes Based on Impedance and Dielectric Properties

  • 期刊论文

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  • 发表日期：

    2026年3月27日

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  • Ömer Sevgili,
  • İkram Orak

摘要

This study evaluates the effect of the Mg3N2 interlayer on interface characteristics by investigating the electrical, impedance, and dielectric properties of Ag/Mg3N2/p-Si Schottky diodes. The study specifically aims to reveal the interface trap density (Nss), series resistance (Rs), and frequency-dependent behavior of the dielectric response. The Mg3N2 thin film was deposited on a p-type Si substrate using the thermal evaporation method. Electrical characterizations were performed at room temperature and in the dark; capacitance (C-V) and conductance (G/ω-V) measurements were taken in the 10 kHz–5 MHz frequency range. The Nss was calculated using the Hill-Coleman method, while the complex dielectric constant (ε′, ε″), loss factor (tanδ), electrical modulus (M′, M″), and AC conductivity (σAC) were calculated using standard formulations. The ε′, ε″, tanδ, M′, M″, and σAC values were determined to be 6.91, 7.43, 1.07, 0.06, 0.07 and 4.13 × 10-6 Ω-1.cm-1 at high frequency (1 MHz) and high voltage (+ 3 V), while the Nss value was on the order of 1013 eV-1·cm-2. The study provides important insights into understanding the impact of the Mg3N2 interlayer on SD performance and highlights the potential contributions of such interlayer engineering in electronic device designs.