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<p>To meet the application requirements of memristor electrodes for nanofilms, specifically dense surface, stable interior, and high-temperature resistance, direct current (DC) magnetron sputtering technology was employed to deposit tungsten thin films on silicon substrates in this study. The impact of sputtering working pressure and power on microscopic morphology, deposition rate, phase structure, resistivity, and corrosion resistance of tungsten nanofilms was examined. The findings indicated that elevated pressure resulted in a reduction in grain size from 145.12 &#xa0;nm to 17.50 &#xa0;nm, along with grain boundary gap expansion; in contrast, a rise in sputtering power leads to larger grain size and denser structure. All films exhibit a mixed phase of α-W and Î<sup>2</sup>-W, where α-W is dominant under all conditions, with the only exception being at the high pressure of 2.0 &#xa0;Pa, under which α-W becomes non-dominant and accounts for only 34.26%. The crystalline quality deteriorates as the pressure increases but improves with increasing power. The phase structure remains stable within the range of room temperature (RT) to 400 °C. The resistivity is highly sensitive to pressure variation, showing a significant jump as pressure increases yet maintaining excellent high-temperature stability within 400 °C. Corrosion resistance declines with the increase of pressure, which is associated with increased porosity of the film.</p>

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Preparation and Properties of a Novel Tungsten Film

  • 期刊论文

  • 发表日期：

    2025年12月3日

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  • Dong Wang,
  • Bao-yi Chen,
  • Yang Wang,
  • Shuai-nan Wang,
  • Qi Pei,
  • Rong-nan Guo,
  • Bing-qian Zhang,
  • Zhi-hua Yuan

摘要

To meet the application requirements of memristor electrodes for nanofilms, specifically dense surface, stable interior, and high-temperature resistance, direct current (DC) magnetron sputtering technology was employed to deposit tungsten thin films on silicon substrates in this study. The impact of sputtering working pressure and power on microscopic morphology, deposition rate, phase structure, resistivity, and corrosion resistance of tungsten nanofilms was examined. The findings indicated that elevated pressure resulted in a reduction in grain size from 145.12  nm to 17.50  nm, along with grain boundary gap expansion; in contrast, a rise in sputtering power leads to larger grain size and denser structure. All films exhibit a mixed phase of α-W and Î2-W, where α-W is dominant under all conditions, with the only exception being at the high pressure of 2.0  Pa, under which α-W becomes non-dominant and accounts for only 34.26%. The crystalline quality deteriorates as the pressure increases but improves with increasing power. The phase structure remains stable within the range of room temperature (RT) to 400 °C. The resistivity is highly sensitive to pressure variation, showing a significant jump as pressure increases yet maintaining excellent high-temperature stability within 400 °C. Corrosion resistance declines with the increase of pressure, which is associated with increased porosity of the film.