<p>Numerous studies of residual stress have shown that it is affected by many factors. In this review, examples are described from different material types (metals and metal-nitrides), deposition methods (evaporation, electrodeposition, sputtering), processing conditions (temperature, growth rate, pressure) and microstructural evolution. An analytical model is described based on fundamental stress-generating mechanisms informed by the experimental studies. The equations are based on underlying physical processes and describe the evolution of the stress-induced wafer curvature. Fitting the model to experiments produces a set of kinetic parameters that can be used to predict the stress under different conditions. The program for fitting the data (KMORFS) is available to interested users.</p>

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Understanding the Origins of Residual Stress in Thin Films Through Measurements and Modeling

  • Eric Chason,
  • Tong Su

摘要

Numerous studies of residual stress have shown that it is affected by many factors. In this review, examples are described from different material types (metals and metal-nitrides), deposition methods (evaporation, electrodeposition, sputtering), processing conditions (temperature, growth rate, pressure) and microstructural evolution. An analytical model is described based on fundamental stress-generating mechanisms informed by the experimental studies. The equations are based on underlying physical processes and describe the evolution of the stress-induced wafer curvature. Fitting the model to experiments produces a set of kinetic parameters that can be used to predict the stress under different conditions. The program for fitting the data (KMORFS) is available to interested users.