Layer Number Identification of MoS2 by the Raman Integrated Area Ratio of Its Vibration Modes to Substrate
摘要
Transition metal dichalcogenides (TMDCs), such as molybdenum disulfide (MoS2), have attracted extensive attention in recent years because of their unique optical, chemical, optoelectronic and electrical properties. The property of MoS2 is closely related to its thickness or the number of layers. It is important identify the number of MoS2 layers before implementing practical applications. In this work, we discuss a nondestructive and powerful method of identifying the layer number of MoS2 on the SiO2/Si substrates by the Raman integrated area ratios of the E12g and A1g modes to those of the SiO2/Si substrate. The related photoluminescence (PL) spectra and optical microscopy are also studied as a reference. This technique of measuring Raman intensity ratios from MoS2 and the substrate can be expanded to determine the layer number of other ultrathin 2D flakes.