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<p>Copper stoichiometry governs the structural, electronic, and photovoltaic properties of Cu(In, Ga)(S, Se)<sub>2</sub> absorbers. This review summarizes the effects of the Cu/(In + Ga) ratio on phase stability, defect thermodynamics, and band-edge modulation, and discusses how Cu control contributes to device performance. Under Cu-rich conditions, transient Cu<sub>2-x</sub>(Se, S) phases enhance grain growth but may cause metallic residues, while Cu-deficient compositions stabilize ordered vacancy compounds that improve p-type conductivity and interface alignment. At the electronic level, reduced Cu content weakens Cu-3d and (S, Se)-p coupling, lowering the valence band and widening the band gap by ~ 0.15–0.23&#xa0;eV. An empirical Cu-dependent extension of the conventional band gap relation is presented to describe this effect. The optimum Cu/(In + Ga) range (0.85 ~ 0.95) ensures phase stability and minimal defect density, providing a basis for performance enhancement through composition and depth-controlled Cu grading.</p>

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Effects of Copper Stoichiometry on Cu(In, Ga)(S, Se)2 Thin-Film Solar Cells

  • 期刊论文

  • 发表日期：

    2025年12月1日

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  • Sang Yeun Park,
  • Byoung Koun Min

摘要

Copper stoichiometry governs the structural, electronic, and photovoltaic properties of Cu(In, Ga)(S, Se)2 absorbers. This review summarizes the effects of the Cu/(In + Ga) ratio on phase stability, defect thermodynamics, and band-edge modulation, and discusses how Cu control contributes to device performance. Under Cu-rich conditions, transient Cu2-x(Se, S) phases enhance grain growth but may cause metallic residues, while Cu-deficient compositions stabilize ordered vacancy compounds that improve p-type conductivity and interface alignment. At the electronic level, reduced Cu content weakens Cu-3d and (S, Se)-p coupling, lowering the valence band and widening the band gap by ~ 0.15–0.23 eV. An empirical Cu-dependent extension of the conventional band gap relation is presented to describe this effect. The optimum Cu/(In + Ga) range (0.85 ~ 0.95) ensures phase stability and minimal defect density, providing a basis for performance enhancement through composition and depth-controlled Cu grading.