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<p>Focused ion beam (FIB) milling of cross-section specimens for transmission electron microscopy (TEM) produces damage and contamination along the sample surface. Techniques that generate contrast related to electronic sample properties, such as scanning TEM electron beam-induced current (STEM EBIC) imaging, are particularly sensitive and, therefore, susceptible to poor surface quality. This work details a specimen preparation protocol employing Ga FIB preparation followed by Ar ion milling optimized for the surface-sensitive mode of STEM EBIC that measures secondary electron emission. We demonstrate the utility of STEM EBIC for assessing surface quality and mapping electronic properties in advanced devices at high resolution. In samples containing fin field-effect transistors (finFET) structures, STEM EBIC shows noticeable improvements to surface quality with post-FIB Ar ion milling and can clearly distinguish between active and inactive finFETs.</p>

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Improving Stem EBIC Specimen Quality with Argon Ion Beam Milling

  • 期刊论文

  • 发表日期：

    2025年6月21日

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  • C. S. Bonifacio,
  • W. A. Hubbard,
  • R. Li,
  • M. L. Ray,
  • P. E. Fischione

摘要

Focused ion beam (FIB) milling of cross-section specimens for transmission electron microscopy (TEM) produces damage and contamination along the sample surface. Techniques that generate contrast related to electronic sample properties, such as scanning TEM electron beam-induced current (STEM EBIC) imaging, are particularly sensitive and, therefore, susceptible to poor surface quality. This work details a specimen preparation protocol employing Ga FIB preparation followed by Ar ion milling optimized for the surface-sensitive mode of STEM EBIC that measures secondary electron emission. We demonstrate the utility of STEM EBIC for assessing surface quality and mapping electronic properties in advanced devices at high resolution. In samples containing fin field-effect transistors (finFET) structures, STEM EBIC shows noticeable improvements to surface quality with post-FIB Ar ion milling and can clearly distinguish between active and inactive finFETs.