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<p>The oxidation behavior and kinetics of (Ti,W)C-WSi<sub>2</sub>-SiC composite at 1000 and 1100&#xa0;°C (the temperature experienced by the space shuttle’s lower surface) for 1-15&#xa0;h were investigated by x-ray diffraction, SEM, and weight gain testing. The results show that the primary phases of the oxidized layer are (Ti,W)O<sub>2</sub>, WO<sub>3</sub>, and SiO<sub>2</sub>. With increasing Si content, the amounts of WO<sub>3</sub> and SiO<sub>2</sub> in the oxidized layer increase. Thermodynamic analysis indicates that WSi<sub>2</sub> oxidizes prior to (Ti,W)C and SiC. During oxidation at 1000&#xa0;°C, the W content in the outer layer is significantly lower than that in the inner layer due to WO<sub>3</sub> volatilization. The addition of silicon forms a TiO<sub>2</sub>/SiO<sub>2</sub> matrix in the outer oxidized layer, which hinders the diffusion of O and W. The inner layer can develop a dense (Ti,W)O<sub>2</sub> protective layer. This work highlights the dual role of Si in oxidation mechanisms, providing critical insights for optimizing TiC-based ceramics in hypersonic environments.</p>

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Oxidation Behavior and Kinetics of (Ti,W)C-WSi2-SiC Composite at 1000-1100 °C: Role of Silicon in Protective Layer Formation and Degradation

  • 期刊论文

  • 发表日期：

    2026年2月9日

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  • Yan Li,
  • Boxin Wei,
  • Yang Yang,
  • Dong Wang,
  • Wen Zhang

摘要

The oxidation behavior and kinetics of (Ti,W)C-WSi2-SiC composite at 1000 and 1100 °C (the temperature experienced by the space shuttle’s lower surface) for 1-15 h were investigated by x-ray diffraction, SEM, and weight gain testing. The results show that the primary phases of the oxidized layer are (Ti,W)O2, WO3, and SiO2. With increasing Si content, the amounts of WO3 and SiO2 in the oxidized layer increase. Thermodynamic analysis indicates that WSi2 oxidizes prior to (Ti,W)C and SiC. During oxidation at 1000 °C, the W content in the outer layer is significantly lower than that in the inner layer due to WO3 volatilization. The addition of silicon forms a TiO2/SiO2 matrix in the outer oxidized layer, which hinders the diffusion of O and W. The inner layer can develop a dense (Ti,W)O2 protective layer. This work highlights the dual role of Si in oxidation mechanisms, providing critical insights for optimizing TiC-based ceramics in hypersonic environments.