Exploration of Chemical-Mechanical Polishing Parameters for Single-Crystal GaN with Al Metal Contact Corrosion
摘要
This study examines how various polishing parameters affect the quality of single-crystal gallium nitride (SC-GaN) when subjected to aluminum (Al) metal contact corrosion (MCC). A single-factor experimental method was used to systematically investigate the effects of chemical parameters (Al powder content, electrolyte type, concentration, and polishing fluid pH) and mechanical parameters (polishing speed, pressure, and fluid flow rate) on the surface morphology and roughness (Ra, Rt) of SC-GaN during polishing. The findings reveal that as the amount of Al powder, the type of electrolyte, the pH level of the polishing fluid, the rate of polishing, and the pressure applied in the polishing process increase, the surface roughness (Ra and Rt) of SC-GaN initially decreases before it starts to increase. However, with the increase of electrolyte concentration and polishing fluid flow rate, the surface roughness of SC-GaN shows a gradually increasing trend. After polishing, the surface roughness Ra and Rt of the SC-GaN material decreased to 1.3 and 15 nm, respectively, with a peak-valley (PV) value of 8.6 nm, resulting in a smoother and flat surface. These results offer important references for the development of chemical-mechanical polishing technology for SC-GaN.