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<p>Chemical mechanical polishing (CMP) is widely used for achieving ultra-smooth surfaces on silicon carbide (SiC) substrates. However, the extremely high hardness and chemical inertness of SiC often lead to insufficient chemical interaction between conventional abrasives and the substrate, resulting in low material removal efficiency. To enhance the chemical mechanical polishing of SiC, we developed Mn<sub>2</sub>O<sub>3</sub>-CeO<sub>2</sub> coating Al<sub>2</sub>O<sub>3</sub> composite abrasives via coprecipitation, effectively boosting surface reactivity without compromising the mechanical robustness of the alumina particles. Under optimal conditions with a 2&#xa0;wt.% Mn<sub>2</sub>O<sub>3</sub>-CeO<sub>2</sub> coating, the composite abrasive achieved a material removal rate (MRR) of 610.28&#xa0;nm/h, representing a 90% improvement over pure Al<sub>2</sub>O<sub>3</sub> abrasives. Simultaneously, surface roughness was reduced to 0.89&#xa0;nm within a 50 × 50&#xa0;μm<sup>2</sup> scanning area. Mechanistic investigations reveal that the Mn-Ce-modified surface facilitates a dynamic redox cycle, where the reversible valence transitions of Mn and Ce species significantly accelerate the formation of a soft, oxidized SiC layer. Surface analysis confirms the establishment of strong Mn–O–Si and Ce–O–Si interfacial bonds, which lower the activation energy for surface oxidation and promote efficient material removal under shear stress. This work demonstrates that surface modification of abrasive particles serves as a potent approach to overcome the chemical inertness of SiC, offering new insights into the design of highly reactive composites abrasives for precision finishing applications.</p>

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Preparation of Mn2O3-CeO2 Dual Oxide-Modified Al2O3 Abrasives for Chemical Mechanical Polishing of SiC

  • 期刊论文

  • 发表日期：

    2026年7月31日

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  • Peixiao Sun,
  • PeiJia Zhang,
  • Hong Lei

摘要

Chemical mechanical polishing (CMP) is widely used for achieving ultra-smooth surfaces on silicon carbide (SiC) substrates. However, the extremely high hardness and chemical inertness of SiC often lead to insufficient chemical interaction between conventional abrasives and the substrate, resulting in low material removal efficiency. To enhance the chemical mechanical polishing of SiC, we developed Mn2O3-CeO2 coating Al2O3 composite abrasives via coprecipitation, effectively boosting surface reactivity without compromising the mechanical robustness of the alumina particles. Under optimal conditions with a 2 wt.% Mn2O3-CeO2 coating, the composite abrasive achieved a material removal rate (MRR) of 610.28 nm/h, representing a 90% improvement over pure Al2O3 abrasives. Simultaneously, surface roughness was reduced to 0.89 nm within a 50 × 50 μm2 scanning area. Mechanistic investigations reveal that the Mn-Ce-modified surface facilitates a dynamic redox cycle, where the reversible valence transitions of Mn and Ce species significantly accelerate the formation of a soft, oxidized SiC layer. Surface analysis confirms the establishment of strong Mn–O–Si and Ce–O–Si interfacial bonds, which lower the activation energy for surface oxidation and promote efficient material removal under shear stress. This work demonstrates that surface modification of abrasive particles serves as a potent approach to overcome the chemical inertness of SiC, offering new insights into the design of highly reactive composites abrasives for precision finishing applications.