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<p>In this work, multilayer Ge<sub>1</sub>Sb<sub>9</sub>/Ti films with the period of 5 and various thickness ratios were designed and deposited via alternating magnetron sputtering. The effect of the Ti nanolayer on the tunable phase transition behavior of the Ge<sub>1</sub>Sb<sub>9</sub> films was systematically investigated. Compared with monolayer Ge<sub>1</sub>Sb<sub>9</sub> film, the multilayer Ge<sub>1</sub>Sb<sub>9</sub>/Ti film possesses excellent crystallization temperature (252°C), data retention ability (176°C for 10 years), high conductive activation energy (0.293&#xa0;eV), and high crystalline resistance (∼10<sup>3</sup>&#xa0;Ω), indicating remarkable improvement in thermal stability and power consumption. With increasing Ti layer thickness, the resistance drift index decreases obviously, ensuring accuracy of information reading. X-ray diffraction results show that the Ti layer can inhibit grain growth and reduce the grain size from 21.78&#xa0;nm to 15.42&#xa0;nm. Atomic force microscopy and x-ray reflectivity analysis reveal that the multilayer Ge<sub>1</sub>Sb<sub>9</sub>/Ti films exhibit a smaller volume change and flatter surface morphology than that of monolayer Ge<sub>1</sub>Sb<sub>9</sub>, indicating greater reliability of electrode contact between the devices. Phase-change memory cells based on [Ge<sub>1</sub>Sb<sub>9</sub>(7&#xa0;nm)/Ti (3&#xa0;nm)]<sub>5</sub> thin films can realize reversible set/reset switching between high and low resistance at a pulse width of 100&#xa0;ns with low power consumption (6.35 × 10<sup>−11</sup>&#xa0;J). All results demonstrated that the inserted titanium nanolayer can effectively tune the crystallization properties of Ge<sub>1</sub>Sb<sub>9</sub> thin film by regulating the thickness ratio, providing an important and meaningful reference for the design of high-performance phase-change memory applications.</p>

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Role of Titanium Nanolayers in Tunable Phase Transition of Ge1Sb9 Thin Film for Phase-Change Memory Application

  • 期刊论文

  • 发表日期：

    2026年7月11日

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  • Yu Li,
  • Weihua Wu,
  • Zhengquan Zhou,
  • Li Li

摘要

In this work, multilayer Ge1Sb9/Ti films with the period of 5 and various thickness ratios were designed and deposited via alternating magnetron sputtering. The effect of the Ti nanolayer on the tunable phase transition behavior of the Ge1Sb9 films was systematically investigated. Compared with monolayer Ge1Sb9 film, the multilayer Ge1Sb9/Ti film possesses excellent crystallization temperature (252°C), data retention ability (176°C for 10 years), high conductive activation energy (0.293 eV), and high crystalline resistance (∼103 Ω), indicating remarkable improvement in thermal stability and power consumption. With increasing Ti layer thickness, the resistance drift index decreases obviously, ensuring accuracy of information reading. X-ray diffraction results show that the Ti layer can inhibit grain growth and reduce the grain size from 21.78 nm to 15.42 nm. Atomic force microscopy and x-ray reflectivity analysis reveal that the multilayer Ge1Sb9/Ti films exhibit a smaller volume change and flatter surface morphology than that of monolayer Ge1Sb9, indicating greater reliability of electrode contact between the devices. Phase-change memory cells based on [Ge1Sb9(7 nm)/Ti (3 nm)]5 thin films can realize reversible set/reset switching between high and low resistance at a pulse width of 100 ns with low power consumption (6.35 × 10−11 J). All results demonstrated that the inserted titanium nanolayer can effectively tune the crystallization properties of Ge1Sb9 thin film by regulating the thickness ratio, providing an important and meaningful reference for the design of high-performance phase-change memory applications.