Scholarlink

<p>This work proposes a high-performance visible-light photodetector based on an extended-source gate-overlap drain optical-gate tunnel field-effect transistor (ESGOD-TFET) architecture. The engineered device exhibits exceptionally strong photon-assisted band-to-band tunneling, delivering photocurrent of ~10<sup>−8</sup>&#xa0;A/µm, while maintaining ultra-low dark current of ~10<sup>−17</sup>&#xa0;A/µm. The structure achieves outstanding optical performance, including maximum sensitivity of ~1 × 10<sup>5</sup>, a signal-to-noise ratio (SNR) exceeding 100&#xa0;dB, responsivity of up to 4.2 × 10<sup>3</sup>&#xa0;A/W, and detectivity of around 1.7 × 10<sup>11</sup> Jones under 400-nm illumination. The proposed design also demonstrates stable operation under temperature variation, trap-assisted tunneling conditions, and illumination intensities up to 5&#xa0;W/cm<sup>2</sup>. These results establish the ESGOD-TFET as a highly energy-efficient and reliable candidate for next-generation visible-light sensing, imaging systems, Internet of Things (IoT) platforms, and biomedical diagnostics.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

High-Performance ESGOD-TFET Photodetector for Visible-Light Sensing with Ultra-Low Dark Current and Enhanced Photoresponse

  • 期刊论文

  • 发表日期：

    2026年7月17日

查看全文
  • Pasumala Vamshidhar Reddy,
  • Raushan Kumar,
  • Syed Sadique Anwer Askari,
  • Anil Kumar Pathakamuri

摘要

This work proposes a high-performance visible-light photodetector based on an extended-source gate-overlap drain optical-gate tunnel field-effect transistor (ESGOD-TFET) architecture. The engineered device exhibits exceptionally strong photon-assisted band-to-band tunneling, delivering photocurrent of ~10−8 A/µm, while maintaining ultra-low dark current of ~10−17 A/µm. The structure achieves outstanding optical performance, including maximum sensitivity of ~1 × 105, a signal-to-noise ratio (SNR) exceeding 100 dB, responsivity of up to 4.2 × 103 A/W, and detectivity of around 1.7 × 1011 Jones under 400-nm illumination. The proposed design also demonstrates stable operation under temperature variation, trap-assisted tunneling conditions, and illumination intensities up to 5 W/cm2. These results establish the ESGOD-TFET as a highly energy-efficient and reliable candidate for next-generation visible-light sensing, imaging systems, Internet of Things (IoT) platforms, and biomedical diagnostics.