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<p>Quantum dot solar cells (QDSCs) are widely regarded as promising third-generation thin-film photovoltaic devices due to their high efficiency, superior optical properties, and excellent light-trapping capabilities. This study explores the Solar Cell Capacitance Simulator in one dimension (SCAPS-1D) simulation tool to investigate the electrical performance of CdTe-based QDSC architectures, focusing on an FTO/TiO<sub>2</sub>/CdTe QDs/CuO layered structure. The effects of absorber layer thickness and TiO<sub>2</sub> electron transport layer (ETL) doped with various metallic doping agents (W, Cu, Mo, and Al) were systematically analysed using SCAPS-1D to identify optimum design parameters for better device performance. The simulation analysis revealed that an absorber thickness of 500&#xa0;nm yielded the maximum permissible value for maintaining optimal performance, with a threshold defect density of 1 × 10<sup>16</sup>&#xa0;cm<sup>−3</sup>. The influence of CdTe quantum dot size on solar cell behaviour was also examined, which showed a significant improvement in power conversion efficiency (PCE) for QDs with a diameter of 4.15&#xa0;nm and a bandgap of 1.94&#xa0;eV compared to the reported CdTe bulk PCE values. Amongst the doped ETLs, Cu-doped TiO<sub>2</sub> (Cu/TiO<sub>2</sub>) showed the highest performance, achieving PCE of 24.3%, which exceeded the pristine TiO<sub>2</sub> devices. The optimized structural and electrical parameters as identified in this work may offer a valuable guideline for the development of high-efficiency thin-film and light-transmitting QDSCs.</p> Graphical Abstract <p></p>

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Analysis of Doped TiO2 and Quantum Size Effect Influence on the Performance of CdTe Quantum Dot Solar Cells via the SCAPS Framework

  • 期刊论文

  • 发表日期：

    2026年7月23日

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  • Rahamatulla Molla,
  • Shaheen Aktar,
  • Abiral Tamang,
  • Nurul Alam,
  • Brajadulal Chattopadhyay

摘要

Quantum dot solar cells (QDSCs) are widely regarded as promising third-generation thin-film photovoltaic devices due to their high efficiency, superior optical properties, and excellent light-trapping capabilities. This study explores the Solar Cell Capacitance Simulator in one dimension (SCAPS-1D) simulation tool to investigate the electrical performance of CdTe-based QDSC architectures, focusing on an FTO/TiO2/CdTe QDs/CuO layered structure. The effects of absorber layer thickness and TiO2 electron transport layer (ETL) doped with various metallic doping agents (W, Cu, Mo, and Al) were systematically analysed using SCAPS-1D to identify optimum design parameters for better device performance. The simulation analysis revealed that an absorber thickness of 500 nm yielded the maximum permissible value for maintaining optimal performance, with a threshold defect density of 1 × 1016 cm−3. The influence of CdTe quantum dot size on solar cell behaviour was also examined, which showed a significant improvement in power conversion efficiency (PCE) for QDs with a diameter of 4.15 nm and a bandgap of 1.94 eV compared to the reported CdTe bulk PCE values. Amongst the doped ETLs, Cu-doped TiO2 (Cu/TiO2) showed the highest performance, achieving PCE of 24.3%, which exceeded the pristine TiO2 devices. The optimized structural and electrical parameters as identified in this work may offer a valuable guideline for the development of high-efficiency thin-film and light-transmitting QDSCs.

Graphical Abstract