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<p>In this study, molybdenum disulfide (MoS<sub>2</sub>)/indium tin oxide (ITO) thin films (MoS<sub>2</sub>/ITO) were successfully fabricated via physical vapor deposition (PVD) under controlled conditions, followed by annealing at 600°C on both glass and silicon dioxide (SiO<sub>2</sub>) substrates. Structural and morphological characterizations using x-ray diffraction (XRD) and scanning electron microscopy (SEM) revealed that annealing enhanced the crystallinity and improved surface homogeneity, with prominent diffraction planes corresponding to the 3R MoS<sub>2</sub> phase and the cubic structure of ITO. Energy-dispersive x-ray spectroscopy (EDX) confirmed the presence of the constituent elements, while thermoelectric property measurements using a ZEM-3 system demonstrated superior performance on silicon substrates compared to glass. The resistivity decreased significantly after incorporating ITO into the MoS<sub>2</sub> thin films. The MoS<sub>2</sub>/ITO thin film deposited on both glass and SiO<sub>2</sub> substrates demonstrated promising thermoelectric properties, with optimal values obtained for resistivity of 18.5 μΩ m, Seebeck coefficient of −320&#xa0;μV&#xa0;K<sup>−1</sup>, and power factor of 14.06 mW m<sup>−1</sup>&#xa0;K<sup>−2</sup> at 619&#xa0;K. The MoS<sub>2</sub>/ITO thin films exhibited negative Seebeck coefficients (<i>n</i>-type), with electrons as the dominant charge carriers.</p> Graphical Abstract <p></p>

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Preparation and Thermoelectric Properties of MoS2/ITO Thin Films

  • 期刊论文

  • 发表日期：

    2026年6月17日

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  • Melania Suweni Muntini,
  • Irasani Rahayu,
  • Mekhala Insawang,
  • Sasfan Arman Wella,
  • Muhammad Firdaus,
  • D. R. Rizka Viviana,
  • Yono Hadi Pramono,
  • Wuttichai Roschat,
  • Nguyen Quy Tuan,
  • Tosawat Seetawan,
  • Athorn Vora-ud

摘要

In this study, molybdenum disulfide (MoS2)/indium tin oxide (ITO) thin films (MoS2/ITO) were successfully fabricated via physical vapor deposition (PVD) under controlled conditions, followed by annealing at 600°C on both glass and silicon dioxide (SiO2) substrates. Structural and morphological characterizations using x-ray diffraction (XRD) and scanning electron microscopy (SEM) revealed that annealing enhanced the crystallinity and improved surface homogeneity, with prominent diffraction planes corresponding to the 3R MoS2 phase and the cubic structure of ITO. Energy-dispersive x-ray spectroscopy (EDX) confirmed the presence of the constituent elements, while thermoelectric property measurements using a ZEM-3 system demonstrated superior performance on silicon substrates compared to glass. The resistivity decreased significantly after incorporating ITO into the MoS2 thin films. The MoS2/ITO thin film deposited on both glass and SiO2 substrates demonstrated promising thermoelectric properties, with optimal values obtained for resistivity of 18.5 μΩ m, Seebeck coefficient of −320 μV K−1, and power factor of 14.06 mW m−1 K−2 at 619 K. The MoS2/ITO thin films exhibited negative Seebeck coefficients (n-type), with electrons as the dominant charge carriers.

Graphical Abstract