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<p>Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> (GST) films are widely used in modern nonvolatile phase-change memory devices, where their structural and electronic properties can be effectively tuned through compositional modification. In this study, the optical properties of amorphous GST films doped with bismuth (Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub>&lt;Bi&gt;) were investigated, and in situ Raman spectroscopy was employed to examine the structural transformation of these films under laser irradiation with varying power and exposure time. Films approximately 100&#xa0;nm thick, with a bismuth concentration of up to 9.2&#xa0;at.%, were fabricated by radio-frequency (RF) magnetron ion-plasma co-sputtering of a composite polycrystalline Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub>–Bi target in an argon atmosphere. The laser irradiation parameters (<i>λ</i> = 633&#xa0;nm) were varied within the range of 0.10–1.60&#xa0;mW for power and 30&#xa0;s to 10&#xa0;min for exposure duration. It was shown that bismuth modification leads to a noticeable increase in the absorption coefficient of the films. Under laser irradiation, both GST and GST&lt;Bi&gt; films undergo a phase transition from the amorphous to the crystalline state. The peculiarities of this phase transition consist in the realization of stable structural states with varying degrees of crystallinity, including states with face-centered cubic (fcc) and hexagonal close-packed (hcp) phases. Such a transformation of the structure of modified GST&lt;Bi&gt; films requires significantly less energy and irradiation time than for GST films.</p>

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The Influence of Laser Irradiation on the Structural Transformation of Bi-Modified Amorphous Ge2Sb2Te5 Films Prepared By RF Ion-Plasma Co-sputtering

  • 期刊论文

  • 发表日期：

    2026年6月1日

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  • G. A. Ismailova,
  • O. Yu. Prikhodko,
  • Zh.K. Tolepov,
  • R. R. Nemkayeva,
  • N. R. Guseinov,
  • S. Ya. Maksimova,
  • A. S. Kapanov,
  • F. F. Komarov,
  • Y. S. Mukhametkarimov,
  • A. Y. Krivonogova,
  • S. L. Peshaya

摘要

Ge2Sb2Te5 (GST) films are widely used in modern nonvolatile phase-change memory devices, where their structural and electronic properties can be effectively tuned through compositional modification. In this study, the optical properties of amorphous GST films doped with bismuth (Ge2Sb2Te5<Bi>) were investigated, and in situ Raman spectroscopy was employed to examine the structural transformation of these films under laser irradiation with varying power and exposure time. Films approximately 100 nm thick, with a bismuth concentration of up to 9.2 at.%, were fabricated by radio-frequency (RF) magnetron ion-plasma co-sputtering of a composite polycrystalline Ge2Sb2Te5–Bi target in an argon atmosphere. The laser irradiation parameters (λ = 633 nm) were varied within the range of 0.10–1.60 mW for power and 30 s to 10 min for exposure duration. It was shown that bismuth modification leads to a noticeable increase in the absorption coefficient of the films. Under laser irradiation, both GST and GST<Bi> films undergo a phase transition from the amorphous to the crystalline state. The peculiarities of this phase transition consist in the realization of stable structural states with varying degrees of crystallinity, including states with face-centered cubic (fcc) and hexagonal close-packed (hcp) phases. Such a transformation of the structure of modified GST<Bi> films requires significantly less energy and irradiation time than for GST films.