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<p>InAs/InAsSb type-II superlattices (T2SLs) are emerging as alternatives to HgCdTe for infrared detection, but their anisotropic hole transport could be a limitation in small-pitch focal plane array (FPA) detectors. To quantitatively assess this anisotropy in the device, modulated electron beam induced current (AC-EBIC) is performed on deep-etched mid-wave infrared (MWIR) T2SL photodiodes. Analysis of the EBIC amplitude and phase profiles reveals a transport anisotropy of &#xa0;2.5 between lateral and vertical diffusion lengths. A numerical diffusion model fits the data, yielding diffusion lengths (3–4 μm vertically, 7–10&#xa0;μm laterally), minority carrier lifetime (400–670 ns), and surface recombination velocity (&lt; 800&#xa0;cm/s). While AC-EBIC effectively quantifies transport anisotropy, current frequency constraints limit the decoupling of individual parameters. Nevertheless, beyond surface characterization, this study demonstrates AC-EBIC’s potential to resolve anisotropic diffusion parameters in photodiodes structures.</p>

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EBIC Characterization of Vertical Transport of Minority Carriers in Gallium-Free Type-II Superlattices for Infrared Detectors

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年6月29日

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  • Baptiste Gonon-Mathieu,
  • Nicolas Baier,
  • Cyril Cervera,
  • Romuald Contie,
  • Nicolas Péré-Laperne,
  • Axel Evirgen,
  • Philippe Christol,
  • Olivier Gravrand

摘要

InAs/InAsSb type-II superlattices (T2SLs) are emerging as alternatives to HgCdTe for infrared detection, but their anisotropic hole transport could be a limitation in small-pitch focal plane array (FPA) detectors. To quantitatively assess this anisotropy in the device, modulated electron beam induced current (AC-EBIC) is performed on deep-etched mid-wave infrared (MWIR) T2SL photodiodes. Analysis of the EBIC amplitude and phase profiles reveals a transport anisotropy of  2.5 between lateral and vertical diffusion lengths. A numerical diffusion model fits the data, yielding diffusion lengths (3–4 μm vertically, 7–10 μm laterally), minority carrier lifetime (400–670 ns), and surface recombination velocity (< 800 cm/s). While AC-EBIC effectively quantifies transport anisotropy, current frequency constraints limit the decoupling of individual parameters. Nevertheless, beyond surface characterization, this study demonstrates AC-EBIC’s potential to resolve anisotropic diffusion parameters in photodiodes structures.