Scholarlink

<p>SnTe, a semiconductor characterized by high carrier mobility and a narrow bandgap, possesses a suite of unique properties that render it a promising candidate for near-infrared (NIR) photodetector applications. However, the excessively high carrier concentration in SnTe results in large dark current. To improve this property, we used In doping to produce an In-SnTe nanofilm photodetector. The material properties and photoelectric performance of the devices were compared before and after doping. It was found that In doping could effectively modulate the optical bandgap, refine grain size, and reduce the surface roughness of SnTe nanofilms. The In-doped SnTe nanofilm photodetector exhibited superior photoresponse under 808&#xa0;nm, 980&#xa0;nm, and 1064&#xa0;nm wavelength illumination. In doping enhanced the resistance of SnTe, reduced dark current, and improved device sensitivity. The In-SnTe nanofilm photodetector shows higher responsivity (473.44 A/W) and detectivity (6.26 × 10<sup>10</sup> Jones) and faster response time (0.16&#xa0;s/0.20&#xa0;s). These excellent properties indicate that the In-SnTe nanofilm photodetector has considerable potential for NIR photodetector applications.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

In-Doped SnTe Nanofilm for High-Performance Near-Infrared Photodetection

  • 期刊论文

  • 发表日期：

    2026年5月14日

查看全文
  • Yiran Wan,
  • Bingbing Zhang,
  • Bingbo Guo,
  • Jingyuan Wu,
  • Yi Gu,
  • Liangcai Wu

摘要

SnTe, a semiconductor characterized by high carrier mobility and a narrow bandgap, possesses a suite of unique properties that render it a promising candidate for near-infrared (NIR) photodetector applications. However, the excessively high carrier concentration in SnTe results in large dark current. To improve this property, we used In doping to produce an In-SnTe nanofilm photodetector. The material properties and photoelectric performance of the devices were compared before and after doping. It was found that In doping could effectively modulate the optical bandgap, refine grain size, and reduce the surface roughness of SnTe nanofilms. The In-doped SnTe nanofilm photodetector exhibited superior photoresponse under 808 nm, 980 nm, and 1064 nm wavelength illumination. In doping enhanced the resistance of SnTe, reduced dark current, and improved device sensitivity. The In-SnTe nanofilm photodetector shows higher responsivity (473.44 A/W) and detectivity (6.26 × 1010 Jones) and faster response time (0.16 s/0.20 s). These excellent properties indicate that the In-SnTe nanofilm photodetector has considerable potential for NIR photodetector applications.