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<p>The cooled infrared detector market supplies sensors for a wide range of applications including military, aerospace, and commercial. In a context where size, weight, and power (SWaP) requirements are increasingly stringent, the infrared industry is striving to reduce cost and power consumption. To meet this need, new products must operate at higher temperatures. However, at high temperatures, low-frequency noise (LFN) becomes a critical issue in maintaining high image quality. This excess LFN has been associated with electrical defects in semiconductor materials. In this work, deep-level transient spectroscopy (DLTS) is carried out for electrical defect characterization in intrinsically doped HgCdTe, operating in the extended mid-wave infrared (MWIR) range. This spectroscopic technique is used to extract defect parameters essential for their identification. The study begins by demonstrating the impact of the defects on the <i>I</i>–<i>V</i> curves, notably through excess trap-assisted tunneling current, underscoring the need for these spectroscopic investigations. Using DLTS, a minority carrier trap is identified within the bandgap and subsequently established as an extended defect (dislocation).</p>

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Electrical Static and Spectroscopic Studies on HgCdTe Extended-MWIR Photodiodes

  • 期刊论文

  • 发表日期：

    2026年5月20日

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  • N. Morisset,
  • M. Franco,
  • Q. Rafhay,
  • A. Brunner,
  • L. Rubaldo

摘要

The cooled infrared detector market supplies sensors for a wide range of applications including military, aerospace, and commercial. In a context where size, weight, and power (SWaP) requirements are increasingly stringent, the infrared industry is striving to reduce cost and power consumption. To meet this need, new products must operate at higher temperatures. However, at high temperatures, low-frequency noise (LFN) becomes a critical issue in maintaining high image quality. This excess LFN has been associated with electrical defects in semiconductor materials. In this work, deep-level transient spectroscopy (DLTS) is carried out for electrical defect characterization in intrinsically doped HgCdTe, operating in the extended mid-wave infrared (MWIR) range. This spectroscopic technique is used to extract defect parameters essential for their identification. The study begins by demonstrating the impact of the defects on the I–V curves, notably through excess trap-assisted tunneling current, underscoring the need for these spectroscopic investigations. Using DLTS, a minority carrier trap is identified within the bandgap and subsequently established as an extended defect (dislocation).