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<p>The thermal evaporation technique was utilized to fabricate heterojunction solar cells based on ZnIn<sub>2</sub>(Se<sub>1−x</sub>S<sub>x</sub>)<sub>4</sub> (ZISS) chalcopyrite semiconductor thin films with various sulfur content (<i>x</i> = 0.0, 0.1, and 0.2). The films, with a thickness of 400&#xa0;nm, were deposited on glass and fluorine-doped tin oxide (FTO) substrates. We propose a <i>p</i>-ZnIn<sub>2</sub>Se<sub>4</sub>/FTO heterojunction solar cell, where the incorporation of sulfur has proven successful in enhancing the ZISS absorber layer. The <i>n</i>-In<sub>2</sub>S<sub>3</sub>/<i>p</i>-ZnIn<sub>2</sub>Se<sub>4</sub>/FTO heterojunction structure contributes to higher solar cell efficiency. It was observed that the conversion efficiency (<i>η</i>) increased with sulfur addition. Using an <i>n</i>-In<sub>2</sub>S<sub>3</sub> window layer, the direct optical energy bandgap decreased from 1.75&#xa0;eV at <i>x</i> = 0.0 to 1.61&#xa0;eV at <i>x</i> = 0.2. The current–voltage (<i>I–V</i>) measurements demonstrated that the performance of the heterojunction solar cell improved with increasing sulfur content. The results indicate that the solar cell prepared with a sulfur ratio of 0.2 achieved the highest efficiency (<i>η</i> = 4.47%) among the samples.</p>

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Influence of Sulfur on Photovoltaic Properties of n-In2S3/p-ZnIn2Se4/FTO Heterojunction Solar Cells

  • 期刊论文

  • 发表日期：

    2026年5月12日

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  • Suha Nabeel Sobhi,
  • Bushra H. Hussein,
  • Rana Hameed Athab,
  • Kareem A. Jasim

摘要

The thermal evaporation technique was utilized to fabricate heterojunction solar cells based on ZnIn2(Se1−xSx)4 (ZISS) chalcopyrite semiconductor thin films with various sulfur content (x = 0.0, 0.1, and 0.2). The films, with a thickness of 400 nm, were deposited on glass and fluorine-doped tin oxide (FTO) substrates. We propose a p-ZnIn2Se4/FTO heterojunction solar cell, where the incorporation of sulfur has proven successful in enhancing the ZISS absorber layer. The n-In2S3/p-ZnIn2Se4/FTO heterojunction structure contributes to higher solar cell efficiency. It was observed that the conversion efficiency (η) increased with sulfur addition. Using an n-In2S3 window layer, the direct optical energy bandgap decreased from 1.75 eV at x = 0.0 to 1.61 eV at x = 0.2. The current–voltage (I–V) measurements demonstrated that the performance of the heterojunction solar cell improved with increasing sulfur content. The results indicate that the solar cell prepared with a sulfur ratio of 0.2 achieved the highest efficiency (η = 4.47%) among the samples.