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<p>This study systematically investigates the influence of carbon content on the electrical and optical properties of Te-doped <i>n</i>-type GaSb single crystals grown by the liquid encapsulated Czochralski (LEC) method. Room-temperature Hall measurements reveal anomalous behavior in which high-purity samples exhibit lower mobility than their lower-purity counterparts. Supported by theoretical calculations based on the two-band model, we attribute this behavior to the reduced acceptor compensation in high-purity crystals. The relatively higher Fermi level in the low-compensation sample enhances the statistical occupation of the heavy-mass secondary L-valley, thereby degrading the overall mobility. Consequently, Hall data obtained at 77&#xa0;K are found to more accurately reflect the intrinsic electrical properties. Optically, photoluminescence (PL) measurements indicate that carbon impurities occupy Sb sites (C<sub>Sb</sub>), creating a competitive relationship that suppresses intrinsic defect complexes such as (V<sub>Ga</sub>Ga<sub>Sb</sub>)<sup>2−</sup>. However, this suppression comes at the cost of enhanced non-radiative recombination and strong electrical compensation. These findings suggest that optimizing <i>n</i>-GaSb requires strictly minimizing carbon contamination while independently controlling intrinsic defects.</p>

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Defects and Conduction Band Electron Distribution in n-GaSb Single Crystal with Low Carbon Content

  • 期刊论文

  • 发表日期：

    2026年5月6日

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  • Wenwen Yang,
  • Youwen Zhao,
  • Chenhui Li,
  • Yihan Bai,
  • Xinyu Lv,
  • Jiangtao Fan,
  • Guowei Wang,
  • Jiaoqing Pan,
  • Guiying Shen

摘要

This study systematically investigates the influence of carbon content on the electrical and optical properties of Te-doped n-type GaSb single crystals grown by the liquid encapsulated Czochralski (LEC) method. Room-temperature Hall measurements reveal anomalous behavior in which high-purity samples exhibit lower mobility than their lower-purity counterparts. Supported by theoretical calculations based on the two-band model, we attribute this behavior to the reduced acceptor compensation in high-purity crystals. The relatively higher Fermi level in the low-compensation sample enhances the statistical occupation of the heavy-mass secondary L-valley, thereby degrading the overall mobility. Consequently, Hall data obtained at 77 K are found to more accurately reflect the intrinsic electrical properties. Optically, photoluminescence (PL) measurements indicate that carbon impurities occupy Sb sites (CSb), creating a competitive relationship that suppresses intrinsic defect complexes such as (VGaGaSb)2−. However, this suppression comes at the cost of enhanced non-radiative recombination and strong electrical compensation. These findings suggest that optimizing n-GaSb requires strictly minimizing carbon contamination while independently controlling intrinsic defects.