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<p>This study investigates the influence of germanium (Ge) addition (2.5, 5, and 7.5 at.%) on the microstructural evolution, physical properties, and mechanical performance of equimolar Sn-Bi-Zn medium-entropy solders. In this work, the “medium-entropy” designation (1R &lt; <i>ΔS</i><sub>conf</sub> &lt; 1.5R) serves as a compositional classification for the designed alloys. Experimental results demonstrate that optimal Ge doping (5 at.%) effectively refines the bulk microstructure and suppresses the growth of the intermetallic compound (IMC) layer at the solder/Cu interface. Specifically, the SBZ-5Ge alloy exhibits a melting point of 137.69°C. Following reflow at 200°C, a Cu<sub>5</sub>Zn<sub>8</sub> IMC layer with a thickness of approximately 4.51&#xa0;μm was formed at the interface, attributed to sluggish diffusion within the distorted medium-entropy lattice. Consequently, the shear strength reached 25.47&#xa0;MPa, representing a 19.13% improvement over the baseline and demonstrating significant potential for advanced low-temperature electronic packaging.</p>

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Microstructural Refinement and Interfacial Evolution of Ge addition Sn-Bi-Zn Medium-Entropy Solders

  • 期刊论文

  • 发表日期：

    2026年5月6日

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  • Su Li,
  • Zhiyang Yue,
  • Jianeng Huang,
  • Pinqiang Dai,
  • Huiyuan Pan,
  • Jun Tian,
  • Chun-Ming Lin

摘要

This study investigates the influence of germanium (Ge) addition (2.5, 5, and 7.5 at.%) on the microstructural evolution, physical properties, and mechanical performance of equimolar Sn-Bi-Zn medium-entropy solders. In this work, the “medium-entropy” designation (1R < ΔSconf < 1.5R) serves as a compositional classification for the designed alloys. Experimental results demonstrate that optimal Ge doping (5 at.%) effectively refines the bulk microstructure and suppresses the growth of the intermetallic compound (IMC) layer at the solder/Cu interface. Specifically, the SBZ-5Ge alloy exhibits a melting point of 137.69°C. Following reflow at 200°C, a Cu5Zn8 IMC layer with a thickness of approximately 4.51 μm was formed at the interface, attributed to sluggish diffusion within the distorted medium-entropy lattice. Consequently, the shear strength reached 25.47 MPa, representing a 19.13% improvement over the baseline and demonstrating significant potential for advanced low-temperature electronic packaging.