<p>Impurity gettering is a key process for extracting harmful impurities from semiconductor materials to optimize their optoelectronic performance. Metal impurities act as major deep-level recombination centers in monocrystalline silicon wafers, and the enrichment of crystal defects and metal impurities is inevitable during silicon crystal production. This not only affects the minority carrier lifetime of silicon crystals but also impacts the photoelectric conversion efficiency and structural stability of solar cells. During the phosphorus diffusion gettering process of solar cells, a diffusion layer is formed by phosphorus diffusion, which drives metal impurities to migrate from the silicon wafer bulk and be fixed in the diffusion layer, thereby purifying the active region of the device. In this study, by using a low-temperature isothermal phosphorus-doping impurity gettering process, the electrical performance parameters of low-resistivity silicon wafer cells were improved. Experimental results confirmed that, compared with higher-temperature treatment, this low-temperature annealing gettering process demonstrated superior phosphorus impurity gettering effects. In addition, the chain impurity gettering efficiency and minority carrier lifetime of the silicon wafers were systematically characterized. For low-quality monocrystalline silicon wafers with higher metal impurity concentrations, the proposed treatment significantly improved the chain impurity gettering efficiency. This process can be applied to the large-scale production of solar cells and can effectively enhance the electrical performance and device quality of monocrystalline silicon solar cells. It not only improves the conversion efficiency of low-resistivity monocrystalline silicon solar cells but also greatly reduces the production cost of high-performance photovoltaic devices, providing a feasible technical approach for the industrial application of low-quality silicon materials.</p> Graphical Abstract <p></p>