Comparative Study of CVD-Grown Graphene using Methane and Benzene as Precursors
摘要
The scalable synthesis of high-quality monolayer graphene is critical for several applications in electronics. In this study, we investigate chemical vapor deposition (CVD) growth of graphene on copper foils using benzene as a liquid carbon precursor and compare it with methane-assisted growth. Benzene, with its aromatic ring structure, provides a lower decomposition barrier and a carbon supply closely aligned with the hexagonal graphene lattice, enabling continuous, defect-minimized monolayers at significantly lower temperatures 300–450°C compared to methane (~800–1000°C). Systematic variation of growth temperature reveals that benzene-grown graphene maintains structural integrity and uniformity at temperatures down to 450°C, whereas further reduction to 350°C increases defect density and reduces coverage. These results demonstrate that benzene-assisted CVD is a promising route for low-temperature, energy-efficient, and scalable graphene synthesis, providing high-quality graphene suitable for practical applications. The study also highlights the importance of precursor delivery to mitigate challenges such as condensation, polymerization, and toxicity, offering insights into precursor-dependent growth mechanisms.