Scholarlink

<p>Silicon carbide (SiC) exhibits high hardness and chemical stability due to its high chemical stability and strong covalent Si-C bonds, and its etching process requires high-energy particle bombardment, imposing strict requirements on the etching mask. This study proposes a method for fabricating nickel metal masks using photoresist molds for the high-precision processing of three-dimensional SiC structures. This method can produce Ni with thicknesses exceeding 50&#xa0;<i>µ</i>m, sidewall verticality of 90 ± 2°, and smooth surfaces. The method enables controllable lateral growth during electroplating, offering advantages such as high sidewall verticality, low defects, and large thickness. High-density plasma etching can achieve etching depths exceeding 300&#xa0;<i>µ</i>m with sidewall verticality of 90 ± 2° and clear sidewall morphology. This method provides a reliable foundation for the fabrication of uniform, anisotropic, and precise three-dimensional structures in MEMS devices, while also being crucial for the development of base station filter components, contributing to higher bandwidth, lower latency, and improved signal integrity.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Electroplated High-Verticality Thick Ni Masks Enabling SiC Wafer > 300-μm ICP Etching

  • 期刊论文

  • 发表日期：

    2026年3月25日

查看全文
  • Cheng Lei,
  • Zhenhao Zhang,
  • Zhiqiang Li,
  • Jiangang Yu,
  • Pinggang Jia,
  • Yongwei Li,
  • Fengchao Li,
  • Ting Liang

摘要

Silicon carbide (SiC) exhibits high hardness and chemical stability due to its high chemical stability and strong covalent Si-C bonds, and its etching process requires high-energy particle bombardment, imposing strict requirements on the etching mask. This study proposes a method for fabricating nickel metal masks using photoresist molds for the high-precision processing of three-dimensional SiC structures. This method can produce Ni with thicknesses exceeding 50 µm, sidewall verticality of 90 ± 2°, and smooth surfaces. The method enables controllable lateral growth during electroplating, offering advantages such as high sidewall verticality, low defects, and large thickness. High-density plasma etching can achieve etching depths exceeding 300 µm with sidewall verticality of 90 ± 2° and clear sidewall morphology. This method provides a reliable foundation for the fabrication of uniform, anisotropic, and precise three-dimensional structures in MEMS devices, while also being crucial for the development of base station filter components, contributing to higher bandwidth, lower latency, and improved signal integrity.