<p>The integration of III-N-V materials into optoelectronic devices demands precise control over strain to avoid structural degradation and performance loss in vertically stacked nanostructures. This study investigates the design of strain-compensated InGaAs/GaNAs multilayers on GaAs substrates using a numerical approach based on technology computer-aided design (TCAD). Employing three analytical strain-balancing models, the average lattice method, thickness-weighted method, and zero-stress method (ZSM), the indium and nitrogen compositions necessary to achieve mechanical equilibrium in alternating compressive (InGaAs) and tensile (GaNAs) layers are designed. TCAD simulations using the nextnano software reveal that strain-balanced configurations effectively localize internal stresses within the heterostructure, minimizing elastic relaxation and stress propagation to adjacent layers. Among the three models, ZSM demonstrated superior performance by achieving near-zero net in-plane force, highlighting its relevance for device-quality heterostructures. The ZSM-balanced stacks yield a numerically predicted residual mismatch &lt; 10⁻⁶. Nevertheless, realistic fluctuations in layer thickness and composition, as well as growth-induced deviations, can rapidly degrade the strain-compensation condition. To assess experimental tolerance, an uncertainty analysis was performed by independently varying the nominal parameters within expected control limits and evaluating the resulting increase in residual mismatch. This research not only presents a robust framework for designing strain-engineered nanostructures using III-N-V materials but also extends TCAD applicability to GaNAs systems where material databases are unavailable. The methodology enhances predictive design capabilities in GaNAs for future optoelectronic devices, including quantum well lasers, solar cells, and photodetectors, by ensuring structural integrity and strain optimization.</p>