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<p>Post-deposition chloride activation of cadmium telluride (CdTe) absorber layers can significantly modulate their physical properties and can play a major role in enhancing the power conversion efficiency of solar cells. Post-deposition CdCl<sub>2</sub> treatment typically promotes grain growth, grain boundary (GB) passivation, and recrystallization in CdTe thin films. Hence, in the present work, CdX<sub>2</sub> (X = Cl and I) treatment was performed on vacuum-evaporated CdTe thin films at temperatures of 235°C, 310°C, and 385°C in order to explore the effect of halide ion size and to determine the applicability of CdX<sub>2</sub>-activated CdTe absorber layers for solar photovoltaics. The physical properties of the activated CdTe absorbers were characterized by a variety of analytical tools. The presence of multiple x-ray diffraction (XRD) peaks revealed the polycrystalline nature of the grown films. After CdX<sub>2</sub> activation, recrystallization of CdTe films was achieved, and the crystallite size was increased from 38&#xa0;nm to 46&#xa0;nm at 310°C. Electrical analysis revealed the ohmic nature of the CdTe layers, where the electrical resistivity was influenced by temperature and the nature of post-deposition halide treatment. The optical absorbance of the CdTe films varied, and Tauc plots demonstrated an optical energy bandgap for CdX<sub>2</sub>-activated CdTe layers of 1.47–1.53&#xa0;eV that varied with treatment temperature. All the developed CdTe thin films exhibited two broad photoluminescence (PL) peaks, with a strong PL peak located at ~705&#xa0;nm. Surface topographical assessment indicated increased surface roughness and grain size with increasing temperature of CdX<sub>2</sub> halide treatment. The findings of the present study confirm that halide-activated CdTe thin films have significant potential as light-harvesting layers in solar cells.</p>

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Evolution of CdX2 (X = Cl, I) Activation Treatment on Recrystallization and Physical Properties of CdTe Absorber Layers for Photovoltaics

  • 期刊论文

  • 发表日期：

    2026年3月30日

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  • Suman Kumari,
  • Himanshu,
  • D. Suthar,
  • G. Chasta,
  • N. Kumari,
  • M. S. Dhaka

摘要

Post-deposition chloride activation of cadmium telluride (CdTe) absorber layers can significantly modulate their physical properties and can play a major role in enhancing the power conversion efficiency of solar cells. Post-deposition CdCl2 treatment typically promotes grain growth, grain boundary (GB) passivation, and recrystallization in CdTe thin films. Hence, in the present work, CdX2 (X = Cl and I) treatment was performed on vacuum-evaporated CdTe thin films at temperatures of 235°C, 310°C, and 385°C in order to explore the effect of halide ion size and to determine the applicability of CdX2-activated CdTe absorber layers for solar photovoltaics. The physical properties of the activated CdTe absorbers were characterized by a variety of analytical tools. The presence of multiple x-ray diffraction (XRD) peaks revealed the polycrystalline nature of the grown films. After CdX2 activation, recrystallization of CdTe films was achieved, and the crystallite size was increased from 38 nm to 46 nm at 310°C. Electrical analysis revealed the ohmic nature of the CdTe layers, where the electrical resistivity was influenced by temperature and the nature of post-deposition halide treatment. The optical absorbance of the CdTe films varied, and Tauc plots demonstrated an optical energy bandgap for CdX2-activated CdTe layers of 1.47–1.53 eV that varied with treatment temperature. All the developed CdTe thin films exhibited two broad photoluminescence (PL) peaks, with a strong PL peak located at ~705 nm. Surface topographical assessment indicated increased surface roughness and grain size with increasing temperature of CdX2 halide treatment. The findings of the present study confirm that halide-activated CdTe thin films have significant potential as light-harvesting layers in solar cells.