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<p>This work reports the design, fabrication, and comprehensive characterization of a matrix-coupled optoelectronic resistor array based on white InGaN light-emitting diodes (LEDs) and CdS photoresistors, developed as a tunable electronic material platform for wide-range analog resistance control. The device incorporates an <i>M</i> × <i>N</i> (4 × 4 demonstrated) LED–photoresistor matrix housed within a mirror-coated polymeric spacer, enabling distance-dependent optical coupling that governs the electronic response of the CdS detectors. Detailed materials processing steps—including polylactic acid-based spacer fabrication, protected-silver reflective coatings, hot-melt encapsulation, and black nitrocellulose optical isolation—are presented to highlight the role of structural and interfacial materials in optical confinement and thermal stability. The optical–electronic behavior is described through an analytical model integrating a modified Shockley LED law, power-law radiance scaling, and Beer–Lambert attenuation through the spacer medium. Model parameters were extracted from measured LED I–V characteristics and fitted light-dependent resistor (LDR) resistance–voltage datasets, achieving excellent agreement with experiments (typical pointwise error &lt;  ± 3%). The fabricated arrays exhibit a wide programmable resistance span—from a few hundred ohms to tens of kilo-ohms per channel—while maintaining sub-picofarad parasitic capacitances, indicating minimal resistor–capacitor (RC) loading and strong potential for high-frequency operation. Temperature-dependent studies reveal stable behavior above ~318&#xa0;K, confirming the robustness of the CdS-based optoelectronic material system. The demonstrated matrix-coupled structure represents a scalable, low-parasitic optoelectronic material architecture suitable for programmable analog elements, tunable loads, sensor interfacing, and electrically isolated control components in emerging electronic and photonic systems.</p>

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Matrix-Coupled LED–CdS Photoresistor Arrays: Fabrication, Optical–Electronic Coupling Modelling, and Wide-Range Programmable Resistance Characteristics

  • 期刊论文

  • 发表日期：

    2026年3月14日

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  • Tanushree Saha,
  • Sneha Ray,
  • Rohit Biswas,
  • Soutik Mondal,
  • Sourav Sarkar,
  • Debarghya Paul,
  • Kanta Bhattacheryya,
  • Palash Das,
  • Anshuman Sarkar,
  • Aritra Acharyya

摘要

This work reports the design, fabrication, and comprehensive characterization of a matrix-coupled optoelectronic resistor array based on white InGaN light-emitting diodes (LEDs) and CdS photoresistors, developed as a tunable electronic material platform for wide-range analog resistance control. The device incorporates an M × N (4 × 4 demonstrated) LED–photoresistor matrix housed within a mirror-coated polymeric spacer, enabling distance-dependent optical coupling that governs the electronic response of the CdS detectors. Detailed materials processing steps—including polylactic acid-based spacer fabrication, protected-silver reflective coatings, hot-melt encapsulation, and black nitrocellulose optical isolation—are presented to highlight the role of structural and interfacial materials in optical confinement and thermal stability. The optical–electronic behavior is described through an analytical model integrating a modified Shockley LED law, power-law radiance scaling, and Beer–Lambert attenuation through the spacer medium. Model parameters were extracted from measured LED I–V characteristics and fitted light-dependent resistor (LDR) resistance–voltage datasets, achieving excellent agreement with experiments (typical pointwise error <  ± 3%). The fabricated arrays exhibit a wide programmable resistance span—from a few hundred ohms to tens of kilo-ohms per channel—while maintaining sub-picofarad parasitic capacitances, indicating minimal resistor–capacitor (RC) loading and strong potential for high-frequency operation. Temperature-dependent studies reveal stable behavior above ~318 K, confirming the robustness of the CdS-based optoelectronic material system. The demonstrated matrix-coupled structure represents a scalable, low-parasitic optoelectronic material architecture suitable for programmable analog elements, tunable loads, sensor interfacing, and electrically isolated control components in emerging electronic and photonic systems.