Scholarlink

<p>Infrared materials used in space-based infrared sensing systems are susceptible to displacement damage from protons in the space radiation environment, leading to a progressive degradation of the system’s sensitivity over its mission life. When protons traverse a material, they interact via both ionizing energy loss or linear energy transfer, generating excess electron–hole pairs, and non-ionizing energy loss (NIEL), generating interstitial/vacancy pairs. These additional defects often act as carrier recombination centers, which reduce a sensor’s sensitivity. Here, the 130 K minority carrier lifetime is measured for a mid-wave infrared InAs/InAsSb superlattice and HgCdTe as a function of proton fluence to evaluate the lifetime degradation as a function of proton energy from 2 MeV to 52 MeV, to provide a measure of the relative proton-energy-dependent defect introduction rate in each of these materials. The results indicate that the product of the defect survival fraction and the defect impact on recombination (<InlineEquation ID="IEq1"> <EquationSource Format="TEX">\(\xi \sigma \nu \)</EquationSource> <EquationSource Format="MATHML"><math> <mrow> <mi>ξ</mi> <mi>σ</mi> <mi>ν</mi> </mrow> </math></EquationSource> </InlineEquation>) is 130<InlineEquation ID="IEq2"> <EquationSource Format="TEX">\(\times \)</EquationSource> <EquationSource Format="MATHML"><math> <mo>×</mo> </math></EquationSource> </InlineEquation> higher for the InAs/InAsSb superlattice than for HgCdTe. Furthermore, the damage generally scales with NIEL as a function of proton energy; however, higher energy deviations from the scaling suggest either a proton energy dependence to the impact defect survival fraction product or inaccuracies in the theoretical NIEL trend for these materials. Example calculations of the on-orbit lifetime difference indicate that the deviations have a negligible impact due to the relatively low protons flux at higher energies.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Experimental Evaluation of the Proton Non-ionizing Energy Loss in II-VI and III-V Superlattice Infrared Materials

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2026年4月1日

查看全文
  • J. V. Logan,
  • A. T. Newell,
  • Z. M. Alsaad,
  • R. A. Carrasco,
  • D. Maestas,
  • C. P. Morath,
  • P. T. Webster,
  • Y. Chang,
  • N. Mahendranathan

摘要

Infrared materials used in space-based infrared sensing systems are susceptible to displacement damage from protons in the space radiation environment, leading to a progressive degradation of the system’s sensitivity over its mission life. When protons traverse a material, they interact via both ionizing energy loss or linear energy transfer, generating excess electron–hole pairs, and non-ionizing energy loss (NIEL), generating interstitial/vacancy pairs. These additional defects often act as carrier recombination centers, which reduce a sensor’s sensitivity. Here, the 130 K minority carrier lifetime is measured for a mid-wave infrared InAs/InAsSb superlattice and HgCdTe as a function of proton fluence to evaluate the lifetime degradation as a function of proton energy from 2 MeV to 52 MeV, to provide a measure of the relative proton-energy-dependent defect introduction rate in each of these materials. The results indicate that the product of the defect survival fraction and the defect impact on recombination ( \(\xi \sigma \nu \) ξ σ ν ) is 130 \(\times \) × higher for the InAs/InAsSb superlattice than for HgCdTe. Furthermore, the damage generally scales with NIEL as a function of proton energy; however, higher energy deviations from the scaling suggest either a proton energy dependence to the impact defect survival fraction product or inaccuracies in the theoretical NIEL trend for these materials. Example calculations of the on-orbit lifetime difference indicate that the deviations have a negligible impact due to the relatively low protons flux at higher energies.