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<p>Silicon carbide (SiC) is a promising third-generation semiconductor material with exceptional properties and significant potential for power semiconductor applications. The continued advancement of SiC MOSFET technology necessitates precise control over the doping concentration in SiC epitaxial layers, particularly for thick films used in high-voltage devices. In this study, we investigate the anomalous drift in doping concentration observed during the growth of 4H-SiC epitaxial layers, which is attributed to variations in the ring coating thickness. Experimental results demonstrate a clear correlation between ring coating thickness and dopant incorporation, with thicker coatings resulting in higher doping levels. To elucidate the underlying mechanism, numerical simulations were performed, revealing that variations in coating thickness modulate the surface distribution of the effective C/Si ratio and influence nitrogen incorporation. This study enhances the understanding of the mechanisms controlling doping concentration in SiC epitaxial growth and provides insights into improving doping uniformity in thick-film epitaxy.</p>

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Mechanism of Nitrogen Doping Concentration Drift in 4H-SiC Epitaxial Layers Induced by Ring Coating Thickness

  • 期刊论文

  • 发表日期：

    2026年2月23日

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  • Weiliang Zhong,
  • Jiahui Wang,
  • Jiulong Wang,
  • Yong Yao,
  • Haifeng Yang,
  • Pengxiang Hou,
  • Le Yu,
  • Zheyang Li,
  • Rui Jin

摘要

Silicon carbide (SiC) is a promising third-generation semiconductor material with exceptional properties and significant potential for power semiconductor applications. The continued advancement of SiC MOSFET technology necessitates precise control over the doping concentration in SiC epitaxial layers, particularly for thick films used in high-voltage devices. In this study, we investigate the anomalous drift in doping concentration observed during the growth of 4H-SiC epitaxial layers, which is attributed to variations in the ring coating thickness. Experimental results demonstrate a clear correlation between ring coating thickness and dopant incorporation, with thicker coatings resulting in higher doping levels. To elucidate the underlying mechanism, numerical simulations were performed, revealing that variations in coating thickness modulate the surface distribution of the effective C/Si ratio and influence nitrogen incorporation. This study enhances the understanding of the mechanisms controlling doping concentration in SiC epitaxial growth and provides insights into improving doping uniformity in thick-film epitaxy.